A method of manufacturing a semiconductor package, the method including providing a first seed layer on an insulation layer such that the first seed layer includes a first metal material; providing a second seed layer on the first seed layer such that the second seed layer includes a second metal material different from the first metal material; forming photoresist patterns on the second seed layer; forming conductive patterns between the photoresist patterns, including the second metal material, and having line shapes that extend in a first direction; removing the photoresist patterns; etching the second seed layer to form second seed patterns having line shapes extending in the first direction; and etching the first seed layer to form first seed patterns having line shapes extending in the first direction, wherein an etchant includes deionized water, a fluorine compound, a competing compound, and a corrosion inhibitor.

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):

R.sup.1—N═R.sup.2R.sup.3  (1)

wherein N is a nitrogen atom; R.sup.1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R.sup.2 and R.sup.3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):

R.sup.1—N═R.sup.2R.sup.3  (1)

wherein N is a nitrogen atom; R.sup.1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R.sup.2 and R.sup.3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

A polysilicon fractured product includes fractured pieces including a ridge portion generated by fracturing a polysilicon rod. An average radius of curvature (r) of the fractured pieces is 50 μm or more at a tip end of a ridge portion having an angle of 70° or less. The polysilicon fractured product is obtained by a method including fracturing a polysilicon rod to obtain fractured pieces, and etching at an etching speed of 2.5 μm/min or less to achieve an etching depth of 5 μm or more by immersing the fractured pieces obtained in the fracturing in an etching solution.

A polysilicon fractured product includes fractured pieces including a ridge portion generated by fracturing a polysilicon rod. An average radius of curvature (r) of the fractured pieces is 50 μm or more at a tip end of a ridge portion having an angle of 70° or less. The polysilicon fractured product is obtained by a method including fracturing a polysilicon rod to obtain fractured pieces, and etching at an etching speed of 2.5 μm/min or less to achieve an etching depth of 5 μm or more by immersing the fractured pieces obtained in the fracturing in an etching solution.

A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

Disclosed is a method of purifying a solution containing hydrofluoric acid, nitric acid and at least one silicon impurity by treating the solution with at least one reverse osmosis membrane. According to the method of the present invention, silicon impurities contained in the solution containing hydrofluoric acid and nitric acid can be selectively removed or reduced. This method can be advantageously used in the photovoltaic industry or in the battery component industry.

Disclosed is a method of purifying a solution containing hydrofluoric acid, nitric acid and at least one silicon impurity by treating the solution with at least one reverse osmosis membrane. According to the method of the present invention, silicon impurities contained in the solution containing hydrofluoric acid and nitric acid can be selectively removed or reduced. This method can be advantageously used in the photovoltaic industry or in the battery component industry.

An etchant comprises: greater than or equal to 20 wt % and less than or equal to 45 wt % ammonium bifluoride; greater than or equal to 0.25 wt % and less than or equal to 10 wt % of a silicon compound; greater than or equal to 5 wt % and less than or equal to 30 wt % hydrochloric acid; greater than or equal to 25 wt % and less than or equal to 60 wt % water; and greater than or equal to 0.5 wt % and less than or equal to 20 wt % of polyhydric alcohol. The silicon compound comprises silica, silica gel, ammonium hexafluorosilicate, potassium hexafluorosilicate, sodium hexafluorosilicate, magnesium hexafluorosilicate, or a combination thereof.