An etchant comprises: greater than or equal to 20 wt % and less than or equal to 45 wt % ammonium bifluoride; greater than or equal to 0.25 wt % and less than or equal to 10 wt % of a silicon compound; greater than or equal to 5 wt % and less than or equal to 30 wt % hydrochloric acid; greater than or equal to 25 wt % and less than or equal to 60 wt % water; and greater than or equal to 0.5 wt % and less than or equal to 20 wt % of polyhydric alcohol. The silicon compound comprises silica, silica gel, ammonium hexafluorosilicate, potassium hexafluorosilicate, sodium hexafluorosilicate, magnesium hexafluorosilicate, or a combination thereof.

Provided is a method for stably supplying trimethylamine containing monomethylamine and/or dimethylamine as trace impurities at a constant makeup.

The present invention relates to a method for supplying a composition including keeping a storage container that encloses a composition therein at a constant temperature of 10° C. or higher to supply a gas of the composition to a predetermined device. The composition contains, in a gaseous phase, trimethylamine, dimethylethylamine, and at least one of dimethylamine or monomethylamine.

Provided is a method for stably supplying trimethylamine containing monomethylamine and/or dimethylamine as trace impurities at a constant makeup.

The present invention relates to a method for supplying a composition including keeping a storage container that encloses a composition therein at a constant temperature of 10° C. or higher to supply a gas of the composition to a predetermined device. The composition contains, in a gaseous phase, trimethylamine, dimethylethylamine, and at least one of dimethylamine or monomethylamine.

There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

The present invention relates generally to the field of semiconductor devices, including solar cells, and compositions and methods for processing semiconductor devices, passivation of semiconductor surfaces, semiconductor etching and anti-reflective coatings for semiconductor devices.

The present invention relates generally to the field of semiconductor devices, including solar cells, and compositions and methods for processing semiconductor devices, passivation of semiconductor surfaces, semiconductor etching and anti-reflective coatings for semiconductor devices.

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.