An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate.

An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate.

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group, or a combination thereof, based on a total weight of the etching composition. The etching composition for pressurization suppresses etching a silicon oxide film and selectively etches a silicon nitride film in a vertically laminated structure in which both the silicon nitride film and the silicon oxide film are exposed to a surface or the silicon nitride film and the silicon oxide film are alternately laminated.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt% to about 14 wt% of an oxidant, about 0.01 wt% to about 5 wt% of a fluorine compound, about 0.01 wt% to about 5 wt% of an amine compound, about 0.01 wt% to about 1 wt% of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt% to about 90 wt% of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt% to about 14 wt% of an oxidant, about 0.01 wt% to about 5 wt% of a fluorine compound, about 0.01 wt% to about 5 wt% of an amine compound, about 0.01 wt% to about 1 wt% of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt% to about 90 wt% of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.