Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

The present invention relates to metal complexes and to electronic devices, especially organic electroluminescent devices, comprising these metal complexes, especially as emitters.

An electro-optic assembly includes a first partially reflective, partially transmissive substrate defining a first surface and a second surface. A second partially reflective, partially transmissive substrate defines a third surface and a fourth surface. A space is defined between a first substrate and a second substrate. A seal is disposed about a perimeter of the first and second substrates. An electro-optic material is disposed between the second surface of the first substrate and the third surface of the second substrate. The electro-optic assembly is operable to change at least one of a reflectance state and a transmittance state in either a discrete or continuous manner. A transparent electrode coating is disposed between the second surface and the third surface. The transparent electrode coating includes an insulator layer, metal layer, and insulator layer (IMI) structure. The reflectance off of the transparent electrode coating is less than about 2%.

The present invention relates to an organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer, wherein the hole injection layer comprises a metal complex of formula (I) and a compound of formula (II), wherein the hole injection layer is arranged between the anode layer and the at least one first emission layer.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a metal-assisted delayed fluorescent (MADF) emitter, a fluorescent emitter, and a host, and the MADF emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

The present invention provides a carboxylate-bridged binuclear iron-sulfur clusters fluorescent probe having the structure of Formula I. The preparation method comprises the following steps: anthracenylmethanamine and p-methoxycarbonylphenyl isocyanate have an addition reaction to get a substitutional methyl benzoate, which is hydrolyzed to get a corresponding carboxylic acid; react the resulting carboxylic acid with alkali to get carboxylate, and then coordinate with binuclear iron precursor to obtain the fluorescent probe. Compared with the prior art, the invention firstly provides the carboxylate-bridged binuclear iron-sulfur clusters of metal complex which similar to the central structure of bio-enzyme. The metal complex, as a fluorescent probe, has good selectivity to the fluorinion detection. The fluorescence titration experiment is simple and easy to operate and the fluorescence changes are sensitive.

##STR00001##

Electronic devices, in particular organic electroluminescent devices, comprising metal complexes of the formula (1). ##STR00001##

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.