An antimicrobial cleaning composition having a pH of from about 9 to about 14 wherein the composition comprises a bispyridinium alkane antimicrobial active and the composition is substantially free of a quaternary ammonium antimicrobial active.

A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

The present composition relates to effervescing compositions used in the treatment of toilets, and in particular malodours which may emanate therefrom, as well as methods of making such compositions and methods of their use. The compositions may be in pulvurent form which may be a granular form, or may be in a solid form such as a tablet.

The present invention relates to a liquid hand dishwashing cleaning composition including a surfactant system, wherein the surfactant system includes an anionic surfactant and a co-surfactant, wherein the anionic surfactant includes a mixture of a linear anionic surfactant and a branched anionic surfactant with a defined degree of branching and with the branching predominantly on an unalkoxylated alkyl sulfate surfactant. Such compositions exhibit surprising and unexpected improved sudsing profile, preferably stable suds, especially when the manual dishwashing is performed in a sink full of water with the cleaning composition diluted in it.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

A tile system for covering a surface. The tile system comprises a first tile assembly connected to a second tile assembly by a connector. Each tile assembly comprises a first tile stacked on a second tile, the first tile and the second tile joined to a reinforcing material disposed therebetween. The connector comprises a first component and a second component that is complementary to the first component. The first component is mounted to the first tile assembly, and the second component is mounted to the second tile assembly.

A flowable washing agent preparation containing, based on the total weight thereof, i) 20 to 80 wt. % surfactant; ii) 2 to 15 wt. % fatty acid; iii) 5 to 25 wt. % organic solvent; iv) 0.3 to 8 wt. % of a salt of a divalent cation; v) less than 20 wt. % water, and washing methods using this preparation.

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

Described herein are home care compositions (e.g., aqueous liquid compositions), which may be used as a hand dishwashing composition, comprising laureth sulfate having 1 moiety or less of an ethylene oxide group, alkyl aryl sulfonate, a blend of C.sub.9-11 branched primary alcohols, and an amine oxide or betaine amphoteric surfactant. Methods of making and using these compositions are also described.

Cleaning solution for cleaning and/or wetting metal surfaces, comprising at least one acid, a first surfactant, which is an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≤25° C., a second surfactant, which is selected from the group consisting of i) an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≥30° C., ii) an alkyl-polyethyleneglycol-ether having a cloud point of ≥45° C.
wherein the cloud points are determined according to European Standard EN 1890:2006, item 8.2 of German Version, with the modification that 10 wt % H.sub.2SO.sub.4 is used as solvent and that the concentration of the surfactant is 1000 mg/L.