A fabric care composition, methods for preparing the fabric care composition, and methods for increasing microbiological robustness of the fabric care composition are disclosed. The fabric care composition may include a preservative system, a cationic softener, a cationic polymer, and an organosilicone. The method for preparing the fabric care composition may include contacting the preservative system, the cationic softener, the cationic polymer, and the organosilicone with one another.

The invention includes ware detergent compositions which provides superior cleaning and removal of oily and fatty soils, without the production of excessive foam. According to the invention applicants have discovered that use of a quaternary cationic surfactant in combination with a nonionic low foaming surfactant can provide oily soil removal from ware that is superior to traditional warewash detergent formulations. Compositions for alkaline, preferably solid, warewash detergents are disclosed, as well as their use in dish machines and methods of manufacture.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

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There is provided a maintenance liquid, which is used in maintenance of a device equipped with a discharge head for discharging an ultraviolet ray curable-type composition containing the acyl phosphine oxide-based photopolymerization initiator toward an attachment object, including a polymerizable compound in which a saturation solubility of an acyl phosphine oxide-based photopolymerization initiator at 20° C. is equal to or greater than 5.0% by mass.

The invention includes ware detergent compositions which provides superior cleaning and removal of oily and fatty soils, without the production of excessive foam. According to the invention applicants have discovered that use of a quaternary cationic surfactant in combination with a nonionic low foaming surfactant can provide oily soil removal from ware that is superior to traditional warewash detergent formulations. Compositions for alkaline, preferably solid, warewash detergents are disclosed, as well as their use in dish machines and methods of manufacture.

Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.