Provided is a semiconductor substrate cleaning composition capable of reducing damage to an oxide film while having a high Ti/W etching selectivity ratio.

Disclosed is a semiconductor substrate cleaning composition including: (A) an oxidizing agent; and (B) a metal-tungsten corrosion inhibitor, wherein the semiconductor substrate cleaning composition does not include (C) a fluorine compound or further contains the fluorine compound in an amount of less than 0.005% by mass with respect to a total mass of the semiconductor substrate cleaning composition, and the semiconductor substrate cleaning composition has a pH of 7 or less.

Peroxycarboxylic acid compositions comprising compatible ionic compounds to deliver conductivity signals to enable monitoring of the peroxycarboxylic acid concentration by conductivity when diluted for use are disclosed. Methods of measuring peroxycarboxylic acid concentration by conductivity are also disclosed. Beneficially, conductivity measurement allows a user to determine concentration of the peroxycarboxylic acid at a point of use without cumbersome titration steps to determine the concentration providing various benefits at an application of use.

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

Warewash detergent compositions with reducing agents to overcome corrosion challenges in stainless steel dish machines subject to conditions from chlorine sanitizing rinse steps (or other oxidizing chlorine containing compositions) are provided. Detergent compositions or booster compositions used in combination with detergents beneficially containing a reducing agent that reacts with chlorine introduced in sanitizing rinse steps that follow detergent cleaning steps are provided. Methods for ware washing using the detergent compositions with reducing agents and methods for reducing residual chlorine in a ware washing cycle are also provided.