To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia.

Bioactive coatings that include a base and a protein associated with the base for actively promoting the removal of organic stains are provided. In aspects, bioactive coatings that are stabilized against inactivation by weathering are provided including a base associated with a chemically modified enzyme, and, optionally a first polyoxyethylene present in the base and independent of the enzyme. The coatings are optionally overlayered onto a substrate to form an active coating facilitating the removal of organic stains or organic material from food, insects, or the environment.

Bioactive coatings that include a base and a protein associated with the base for actively promoting the removal of organic stains are provided. In aspects, bioactive coatings that are stabilized against inactivation by weathering are provided including a base associated with a chemically modified enzyme, and, optionally a first polyoxyethylene present in the base and independent of the enzyme. The coatings are optionally overlayered onto a substrate to form an active coating facilitating the removal of organic stains or organic material from food, insects, or the environment.

Embodiments of a process for treating a fluid are provided. The process for treating a fluid includes supplying a first fluid to a circulating chamber and introducing a first gas to the first fluid. A portion of the first gas is dissolved in the first fluid and a portion of the first gas is held in a head space portion of the circulating chamber. The process further includes mixing a portion of the first fluid drawn out from the circulating chamber and a portion of the first gas drawn out from the head space portion to form a mixture. The process further includes spraying the mixture back into the circulating chamber by a two-fluid nozzle. In addition, the first gas is further dissolved into the first fluid to form a high conductivity fluid. The process further includes draining the high conductivity fluid from the circulating chamber.

Embodiments of a process for treating a fluid are provided. The process for treating a fluid includes supplying a first fluid to a circulating chamber and introducing a first gas to the first fluid. A portion of the first gas is dissolved in the first fluid and a portion of the first gas is held in a head space portion of the circulating chamber. The process further includes mixing a portion of the first fluid drawn out from the circulating chamber and a portion of the first gas drawn out from the head space portion to form a mixture. The process further includes spraying the mixture back into the circulating chamber by a two-fluid nozzle. In addition, the first gas is further dissolved into the first fluid to form a high conductivity fluid. The process further includes draining the high conductivity fluid from the circulating chamber.

A chemical solution supply part for supplementing the chemical solution to the chemical solution storage tank and a purge gas supply part for supplying N.sub.2 gas as a purge gas to the chemical solution storage tank are in communication with the chemical solution storage tank, and a first manometer serving as a pressure measurement part is arranged on the chemical solution storage tank. In addition, a drain piping is connected to a head portion of the plunger pump, and an automatically controlled air-bleed valve, which is an air-bleed mechanism, is arranged on the drain piping. On the other hand, a second manometer is arranged in the middle of the chemical solution supply pipe, and a front end of the solution supply pipe on the downstream side serves as an injection point for the chemical solution S.

A chemical solution supply part for supplementing the chemical solution to the chemical solution storage tank and a purge gas supply part for supplying N.sub.2 gas as a purge gas to the chemical solution storage tank are in communication with the chemical solution storage tank, and a first manometer serving as a pressure measurement part is arranged on the chemical solution storage tank. In addition, a drain piping is connected to a head portion of the plunger pump, and an automatically controlled air-bleed valve, which is an air-bleed mechanism, is arranged on the drain piping. On the other hand, a second manometer is arranged in the middle of the chemical solution supply pipe, and a front end of the solution supply pipe on the downstream side serves as an injection point for the chemical solution S.

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.