A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

According to one embodiment, there is provided a cleaning agent. The cleaning agent includes an azole-based compound having a group including at least one selected from the group consisting of a glycidyl group, a hydrolyzable silyl group, and an amino group.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.