Patent classifications
C11D7/32
Aqueous solutions containing a complexing agent in high concentration
Aqueous solution comprising (A) in the range of from 30 to 60% by weight of a complexing agent, selected from the alkali metal salts of methylglycine diacetic acid and the alkali metal salts of glutamic acid diacetic acid, (B) in the range of from 1 to 25% by weight of at least one salt of a sulfonic acid or of an organic acid, percentages referring to the total respective aqueous solution.
CLEANING LIQUID AND METHOD FOR CLEANING SUBSTRATE
A cleaning liquid for cleaning a substrate having a first metal atom-containing layer that contains ruthenium and a second metal atom-containing layer that contains a metal atom other than ruthenium, both of the layers contacting each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer is exposed on a surface. The cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, and at least one amine other than the hydrazine compound and a quaternary hydroxide. In General Formula (a1), R.sup.1 and R.sup.2 represent an organic group including no carbonyl group or a hydrogen atom
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CLEANING LIQUID AND METHOD FOR CLEANING SUBSTRATE
A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom
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CLEANING LIQUID AND METHOD FOR CLEANING SUBSTRATE
A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom
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DETERGENT COMPOSITION FOR HARD SURFACES
The cleaning agent composition for hard surface contains at least one kind of carboxylic acid compound selected from the group consisting of an aliphatic monocarboxylic acid, a polycarboxylic acid, and any neutralized salt of these, a specific first alkyleneoxy group-containing compound, a specific second alkyleneoxy group-containing compound, and a specific oxypropylene group-containing compound.
PHOSPHORUS FREE LOW TEMPERATURE WARE WASH DETERGENT FOR REDUCING SCALE BUILD-UP
Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.
Stabilized perfume oils
Stable formulations and perfume compositions include amino alcohol(s) as well as >10 wt % fragrances.
Supercritical Fluid Cleaning for Components in Optical or Electron Beam Systems
To clean components in semiconductor manufacturing equipment, such as an optical system or an electron beam system, a component is heated in a chamber. A supercritical fluid formulation is applied to the component in the chamber, which removes molecular and/or particulate contaminants. The supercritical fluid formulation can include one or more of carbon dioxide, water, HCF, alkane, alkene, nitrous oxide, methanol, ethanol, or acetone.
METHOD OF REDUCING DEFECTS ON POLISHED WAFERS
This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.
METHOD OF REDUCING DEFECTS ON POLISHED WAFERS
This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.