C11D7/32

Cleaning liquid for lithography and method for cleaning substrate

A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Multi step cleaning system
09795267 · 2017-10-24 ·

A multi step cleaning system, for cleaning a cleaning surface using a first cleaning solution containing alkyl dimethyl benzyl ammonium chloride and a second cleaning solution containing acetic acid. The first cleaning solution is impregnated in a first wipe, and the second cleaning solution is impregnated in a second wipe. The wipes are sealed and provided to the user in a double chambered packet, having a first chamber and a second chamber that are isolated from each other. In use, after the packet is opened, the first wipe is used to wipe the cleaning surface, the cleaning surface is fully dried, and the second wipe is used to wipe the cleaning surface. The cleaning surface is left with an extraordinary shine that is long lasting and repels dirt, dust, and grime.

Citrate salt bathroom cleaners

A hard surface cleaning composition, namely a bathroom cleaning composition, using fully neutralized ethanolamine citrate salts is disclosed. The cleaning composition is unexpectedly safe to use, environmentally-friendly and efficacious for removal of soap scum and water hardness stains at mildly acidic and/or alkaline pHs. Methods of using the same are disclosed.

Low VOC composition to remove food, beverage, pet and protein stains
09790455 · 2017-10-17 · ·

A Low-VOC, water-based cleaner containing Baypure CX 100/34 or EDTA Versene 100, Glycol Ether DPNP, or glycol ether EB and DB, Acetone, Acetic Acid, and fragrance. The VOC content of this composition is selectable to be 3.0% or 0% (zero).

Sustainable laundry sour compositions with iron control

Linen treatment compositions and linen processes are disclosed which help to prevent iron deposition from wash water, and/or redeposition after iron containing stain (such as blood) removal by alkaline detergents. The linen treatment composition is a combination of a hydroxycarboxylic acid and an acid source, which may be organic or inorganic. The invention provides for effective iron control in a phosphorus-free formula that is also free of toxic or hazardous chemicals and includes sustainable, environmentally friendly ingredients, while still providing effective iron control.

Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method

This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.

CLEANING AGENT, CLEANING LIQUID, AND CLEANING METHOD FOR REVERSE OSMOSIS MEMBRANE
20170275571 · 2017-09-28 ·

Provided are a cleaning agent and a cleaning liquid that prevent a reduction in the rejection rate of an RO membrane which may occur when the RO membrane is cleaned and a method for cleaning an RO membrane with the cleaning liquid. The agent for cleaning an RO membrane includes a urea derivative. The urea derivative preferably includes urea (H.sub.2N—CO—NH.sub.2) and/or biuret (H.sub.2N—CO—NH—CO—NH.sub.2). The cleaning liquid is an aqueous solution produced by diluting the cleaning agent. The method for cleaning an RO membrane uses the cleaning liquid. Urea and biuret have a structure analogous to amide bonds included in aromatic polyamide RO membranes, and have a strong affinity for amide bond portions. Urea and biuret adsorb onto the amide bond portions, and prevent the amide bonds from being broken by the cleaning liquid.

CLEANING AGENT, CLEANING LIQUID, AND CLEANING METHOD FOR REVERSE OSMOSIS MEMBRANE
20170275571 · 2017-09-28 ·

Provided are a cleaning agent and a cleaning liquid that prevent a reduction in the rejection rate of an RO membrane which may occur when the RO membrane is cleaned and a method for cleaning an RO membrane with the cleaning liquid. The agent for cleaning an RO membrane includes a urea derivative. The urea derivative preferably includes urea (H.sub.2N—CO—NH.sub.2) and/or biuret (H.sub.2N—CO—NH—CO—NH.sub.2). The cleaning liquid is an aqueous solution produced by diluting the cleaning agent. The method for cleaning an RO membrane uses the cleaning liquid. Urea and biuret have a structure analogous to amide bonds included in aromatic polyamide RO membranes, and have a strong affinity for amide bond portions. Urea and biuret adsorb onto the amide bond portions, and prevent the amide bonds from being broken by the cleaning liquid.

SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO TUNGSTEN-CONTAINING MATERIALS, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

Non-aqueous cleaner for vegetable oil soils

The invention discloses cleaning compositions which employ a synergistic combination of an ester solvent, preferably a fatty acid methyl ester in combination with one or more linear alkyl amines. The alkyl amines act as to remove and suspend organic oils which have been burnt or adhered to a surface with heat and may even be used alone as a soil removal agent. The cleaning compositions have particular use in cleaning of distillation towers associated with biofuel, and vegetable oil refining, but also find use in cleaning ovens, food cooking surfaces and even dry cleaning.