A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.

An object of the present invention is to provide a chemical liquid purification method by which a chemical liquid capable of inhibiting the occurrence of short in a semiconductor substrate manufactured by a photolithography process is obtained. Another object of the present invention is to provide a chemical liquid manufacturing method and a chemical liquid. The chemical liquid purification method of the present invention includes a purification step of filtering a liquid to be purified by using a filter, in which a filter satisfying a condition 1 or a condition 2 in the following test is used as the filter. Test: 1,500 ml of a test liquid formed of the organic solvent is brought into contact with the filter for 24 hours under a condition of 23° C., and a content of particles containing at least one kind of metal selected from the group consisting of Fe, Al, Cr, Ni, and Ti in the test liquid after the contact satisfies a predetermined condition.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

Aqueous solution comprising (A) in the range of from 30 to 60% by weight of a complexing agent, selected from the alkali metal salts of methylglycine diacetic acid and the alkali metal salts of glutamic acid diacetic acid, (B) in the range of from 1 to 25% by weight of at least one salt of a sulfonic acid or of an organic acid, percentages referring to the total respective aqueous solution.

Aqueous solution comprising (A) in the range of from 30 to 60% by weight of a complexing agent, selected from the alkali metal salts of methylglycine diacetic acid and the alkali metal salts of glutamic acid diacetic acid, (B) in the range of from 1 to 25% by weight of at least one salt of a sulfonic acid or of an organic acid, percentages referring to the total respective aqueous solution.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or a cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 300° F.) but also shows enhanced cleaning at ambient temperatures.