Patent classifications
C11D7/34
Treatment liquid, method for washing substrate, and method for removing resist
A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.—12 to 10.sup.−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.
CLEANING AGENT FOR SEMICONDUCTOR COMPONENT, AND USE THEREOF
A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.
CLEANING AGENT FOR SEMICONDUCTOR COMPONENT, AND USE THEREOF
A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.
Composition for surface treatment and method of producing the same, surface treatment method, and method of producing semiconductor substrate
The purpose of the present invention is to provide means for sufficiently removing residues on a surface of an object which has been polished including silicon nitride, silicon oxide, or polysilicon. Provided is a composition for surface treatment including an anionic surfactant having a molecular weight of 1,000 or less and water, the composition having a pH of less than 7, wherein a ratio of a molecular weight of a hydrophilic moiety to a molecular weight of a hydrophobic moiety (the molecular weight of the hydrophilic moiety/the molecular weight of the hydrophobic moiety) of the anionic surfactant is 0.4 or more (in which the hydrophobic moiety is a hydrocarbon group having 4 or more carbon atoms and the hydrophilic moiety is a part excluding the hydrophobic moiety and a counterion), and the composition for surface treatment is used for surface treatment of an object which has been polished including at least one selected from the group consisting of silicon nitride, silicon oxide, and polysilicon.
Photoresist remover compositions
The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH.sub.2—CH.sub.2—).sub.n—OH, —OH, —O—C(═O)—CH.sub.3, wherein n′ is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate. ##STR00001##
Washing method, washing device, storage medium, and washing composition
A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.
Washing method, washing device, storage medium, and washing composition
A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.
POLYALPHAOLEFIN PHENOLS WITH HIGH PARA-POSITION SELECTIVITY
The present disclosure provides a detergent additives and methods for preparing a sulfurized alkyl phenate product from polyalphaolefins.
POLYALPHAOLEFIN PHENOLS WITH HIGH PARA-POSITION SELECTIVITY
The present disclosure provides a detergent additives and methods for preparing a sulfurized alkyl phenate product from polyalphaolefins.
Cleaning Compositions
This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.