A method is performed at a computer system to clean heat exchanger systems. The system estimates the fouling level of a heat exchanger system based on measured performance parameters of the heat exchanger system. The performance parameters include the rate of heat exchange. The system generates a system performance cost model based on the estimated fouling level of the heat exchanger system. The system also determines an initial cleaning recipe based on operational parameters of the heat exchanger system. The operational parameters include chemical composition and operating temperatures of fluids passing through the heat exchanger system. The system generates a cleaning cost model based on the initial cleaning recipe and calculates a cleaning schedule to minimize overall operational cost using both the system performance cost model and the cleaning cost model. The system then executes the initial cleaning recipe at the heat exchanger system according to the calculated cleaning schedule.

The present invention relates to a cleaning liquid on a silicon oxide film and/or a silicon nitride film, and the cleaning liquid contains (i) at least one compound selected from the group consisting of a compound represented by the formula (1), a compound represented by formula (2), a compound represented by formula (3), and a compound represented by the formula (4); and (ii) a reducing agent;

##STR00001##

in the above formulas, R.sub.1 to R.sub.12 and n are the same as the definitions described in the description.

The present invention relates to a cleaning liquid on a silicon oxide film and/or a silicon nitride film, and the cleaning liquid contains (i) at least one compound selected from the group consisting of a compound represented by the formula (1), a compound represented by formula (2), a compound represented by formula (3), and a compound represented by the formula (4); and (ii) a reducing agent;

##STR00001##

in the above formulas, R.sub.1 to R.sub.12 and n are the same as the definitions described in the description.

The present disclosure relates to a process solution composition for polymer treatment comprising: a fluorine compound; a ketone-based solvent; and a polar aprotic solvent, wherein the ketone-based solvent is one or more selected from the group consisting of compounds represented by Chemical Formula 1 or Chemical Formula 2, and has an effect capable of preventing damage to various types of metals while improving the power of removing an adhesive polymer remaining on the wafer circuit surface in a semiconductor manufacturing process.

The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SO.sub.x or NO.sub.y partial structure-containing compound having a partial structure represented by SO.sub.x or NO.sub.y (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.

The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SO.sub.x or NO.sub.y partial structure-containing compound having a partial structure represented by SO.sub.x or NO.sub.y (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.

A chemical solution used for cleaning or etching a ruthenium-containing layer, which can obtain the ruthenium-containing layer having a reduced surface roughness while maintaining a good etching rate against the ruthenium, and a method for fabricating ruthenium wiring. The chemical solution includes orthoperiodic acid, a base component, and any one of a nitrogen-containing heterocyclic compound, an organic phosphonic acid, and an organic carboxylic acid.

Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.

Provided is a means capable of sufficiently removing organic residues on the surface of an object to be polished after polishing. A surface treatment composition includes a polymer having a building block represented by Formula (1) in [Chemical Formula 1], a chelating agent, and water and is used to treat the surface of an object to be polished after polishing, and the chelating agent has at least one of a phosphonic acid group and a carboxylic acid group.

##STR00001##

In Formula (1), R.sup.1 is a hydrocarbon group having 1 to 5 carbon atoms; and R.sup.2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

A composition for cleaning a microelectronic device substrate is provided. The composition is useful for cleaning in-process microelectronic device substrates possessing exposed cobalt, molybdenum, copper, molybdenum, tungsten, and dielectric surfaces. Also provided is a method for cleaning such devices and a kit comprising one or more of the components of the composition.