A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

The present invention provides a cleaner composition having excellent cleaning properties and appropriate drying properties. The present invention is a cleaner composition including: (A) a hydrofluoroolefin having a boiling point of 30° C. or more and less than 100° C.; and (B) at least one of a perfluoropolyether having a boiling point of 100° C. or more and a hydrofluoroolefin having a boiling point of 100° C. or more, where a mass ratio of the component (A) and the component (B) is 99:1 to 55:45.

The invention relates to the use of a composition comprising a C.sub.1 to C.sub.6 alkanol and a carboxylic acid ester of formula (I) wherein R.sup.1 is selected from a C.sub.1 to C.sub.6 alkyl, which may be unsubstituted or substituted by OH or F, and —X.sup.21—[O—X.sup.22].sub.n—H; R.sup.2 is selected from a C.sub.1 to C.sub.6 alkyl, which may be unsubstituted or substituted by OH or F, and —X.sup.21—[O—X.sup.22].sub.n—H; X.sup.21, X.sup.22 are independently selected from C.sub.1 to C.sub.6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C.sub.1 to C.sub.6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.

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The present disclosure provides fluid barriers as well as systems and methods of forming fluid barriers. The method includes cleaning, via a blast media, a first side of a component and heating the component to a first temperature. Subsequently, the component is cleaned using a solvent. Subsequent to heating at least the component, a primer coating layer is formed on the first side of the component, and a topcoat layer is formed in contact with the primer coating layer. A primer coating material can be heated to a second temperature prior to formation of the primer coating layer. The first temperature can be different than the second temperature.

The invention relates to a purge composition comprising a polymer formulation which is tacky and suitable to cross-link and/or cure to become less tacky, at least 50% of solids of the polymer formulation comprising a polysiloxane, polyurethane, acrylate resin, epoxy resin, melamine resin, formaldehyde resin, or a mixture of two or more of any of these; and a curing catalyst suitable to cure the polymer formulation, wherein the composition is suitable to cross-link and/or cure at within 0.1 to 120 minutes at a temperature in a range of from 0 to 450° C. within a device into which the composition is injected. The invention also relates to a method of cleaning a material processing device.

The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25 C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A moisturizing composition of a contact lens is disclosed in the present invention. A rinse agent (ex. TEOA) is applied for bonding a moisturizing stabilizer (ex. HPMC) and a compound of a hydrophilic cosolvent (ex. PEG) and a moisturizing additive (ex. HA). Hence, the solubility of the moisturizing additive and the aqueous solution can be improved via applying the hydrophilic cosolvent; the stability of the combination of the moisturizing stabilizer and the moisturizing additive can be improved via the structural and the chemical stabilities of the moisturizing stabilizer itself. Meanwhile, the moisturizing composition disclosed can be directly applied to the raw material of the conventional contact lens during manufacturing the high-moisturizing contact lenses.

An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.1 to 100 mass ppt, and a charge potential is equal to or lower than 100 mV.

Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.