A method and cleaning solution for cleaning electronic substrates, such as a semiconductor wafers, hard disks, photomasks or imprint molds. The method comprises the steps of contacting a surface of the substrate with a cleaning solution comprised of a polyphosphate, and then removing the cleaning solution from the surface. Additional optional steps include applying acoustic energy to the cleaning solution while the cleaning solution is in contact with the surface, and removing the cleaning solution from the surface by rinsing the surface with a rinsing solution with or without the application of acoustic energy. The cleaning solution comprises a polyphosphate, such as any of the water soluble polyphosphates. Depending on the application, the cleaning solution may also comprise a base and/or a quantity of suspended particles. Complexing agents, amines, biocides, surfactants and/or other substances, may also be added to the cleaning solution.

The aim of the invention is to improve the cleaning power of washing and cleaning agents, especially with regards to bleachable stains, while avoiding any damage to the textile treated with said washing and cleaning agents. This is achieved by an aqueous washing liquid in a device for cleaning textile substrates, containing a plurality of water in-soluble solid particles and a mediator compound, which can produce an oxidizing bleaching agent, in an electrochemical cell using electric voltage in the washing liquid.

The present disclosure relates to a method for treating a substrate. A method for treating a substrate includes a chamber cleaning step. In the chamber cleaning step a treatment space is cleaned by supplying a cleaning fluid. The cleaning fluid is generated by chemical reaction of a first gas and a second gas by applying plasma while supplying the first gas and the second gas which is different from the first gas into the inside of the process chamber.

Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 S, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 S, prior to or while exposing the same to the UV-radiation. Additionally, the pH of the aqueous liquid medium may be adjusted to a range of 8 to 11 or 3 to 6 prior to or while exposing the same to the UV-radiation. The adjustments may lead to a shift in an equilibrium of reactive species generated in the aqueous liquid medium by the UV-radiation towards preferred species.

The present invention is a deep cleaning process for carpets through its unique restorative cleaning process. The present comprises a use of restorative cleaning agent and cleansers according to the pH level of the stain, and a method either of agitating with hand-held polyester carpet brush or of rotary power scrubbing with polyester brush.

Through its unique deep cleaning process including anti-ghost stain treatment to prevent the stain from re-appearing, the present invention will yield cleaner cleaning process than the industry standard cleaning method. In an alternative embodiment of the Restorative Cleaning Process of the present invention, man-made carpet fibers are cleaned using a series of cleaning steps designed to extract soil particulates from the fibers of the carpet and decrease the time it takes for the carpet to dry. In addition, an anti-reappearing ghost spot device utilizing the anti-reappearing ghost spot post-treatment is used to prevent spots from re-appearing.

The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.

Embodiment disclosed herein generally relate to a method for removing aluminum fluoride contamination from semiconductor processing equipment. A method for cleaning semiconductor processing equipment is disclosed herein. The method includes maintaining a container of water at a temperature of between 50 degrees Celsius and 100 degrees Celsius and soaking a semiconductor processing equipment having surface contamination comprising aluminum fluoride in the water, wherein the semiconductor processing equipment is comprised of a material having a solubility directly related to the temperature of the water.

After hydrophobization of surfaces of patterns, a liquid film of pure water or the like is formed on the surfaces of the substrate. At this stage, the liquid of the liquid film cannot be present between the patterns because of hydrophobization, and gas is present there. With the front surface of the substrate covered with the liquid film, a liquid to which ultrasonic waves are applied is supplied to the back surface of the substrate, whereby the back surface of the substrate is cleaned due to the cavitation collapse energy in the liquid caused by the ultrasonic waves. While collapse of cavitation occurs at the front surface of the substrate, the presence of the gas between the patterns prohibits collapse of cavitation between the patterns, the liquid film can prevent contamination while preventing collapse of the patterns, and the back surface of the substrate is cleaned favorably.

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.

This disclosure describes a composition which can provide real-time feedback during medical device cleaning or reprocessing. The composition can be used to monitor the amount of biological material cleaned from medical devices and to determine when cleaning is complete. The disclosure also relates to a method of cleaning, or assessing the cleanliness of, a medical device such as an endoscope. Cleanliness can be assessed by contacting the medical device with the composition, shining an excitation light on the composition, and measuring intensity of resulting fluorescence over time.