A flip-chip package structure including a semiconductor chip and a carrier having a plurality of electrical connection pads is provided, in which the semiconductor chip is connected to second solders on the electrical connection pads of the carrier via first solders. The thickness of the insulating protective layer on the surface of the carrier changes according to the thickness of the first solder, the thickness of the second solder and the thickness of the electrical connection pad, so that it has a certain thickness to avoid bridging problems in the solders, and can also avoid problems with holes in the solders caused by excessive thickness.

Microelectronic die package structures formed according to some embodiments may include a substrate having one or more solder structures. A first set of solder structures is located in a peripheral region of the substrate and a second set of solder structures is located in a central region of the substrate. A height of individual ones of the second set of solder structures is greater than a height of individual ones of the first set of solder structures. A die having a first side and a second side includes one or more conductive die pads on the first side, where individual ones of the conductive die pads are on individual ones of the first set solder structures and on individual ones of the second set solder structures. A die backside layer is on the second side of the die.

An electronic package, a packaging substrate and a fabricating method are provided, in which a conductive bump pad is formed on an electrical contact pad of the packaging substrate, so that when an electronic element is bonded to the packaging substrate via a solder material in a flip-chip process, the conductive bump pad can guide the flow of the solder material. Therefore, the problem of empty soldering caused by the solder material not effectively contacting with the electrical contact pad can be avoided.

A semiconductor structure and a method of fabricating the semiconductor structure are disclosed. The semiconductor structure includes: a carrying layer, a barrier layer, a solder layer and an adhesive layer. The barrier layer is located on the surface of the carrying layer, and there are openings in the barrier layer. The barrier layer includes multiple sub-barrier layers in a stack. The multiple sub-barrier layers respectively form a plurality of steps in the opening, and the heights of the plurality of steps decrease sequentially in a direction from outside of the opening to inside of the opening. A solder layer and an adhesive layer are located in the opening, and the adhesive layer covers the solder layer.