Patent classifications
B01F23/10
Fuel cell system and tail gas burner assembly and method
The present invention is concerned with improved swirl burners, particularly, but not limited to, swirl burners used in fuel cell systems.
Fuel cell system and tail gas burner assembly and method
The present invention is concerned with improved swirl burners, particularly, but not limited to, swirl burners used in fuel cell systems.
SMART GAS MIXER
A gas mixer device for mixing a plurality of gases to generate a gas mixture comprising a desired composition, wherein the gas mixer device comprises: a chassis supporting a mixing chamber for receiving the respective gas and storing said gas mixture, and a plurality of mass flow controllers configured to measure and control a mass flow of the respective gas. According to the present invention, the respective mass flow controller is configured to be releasably connected to the chassis. Furthermore, the present invention relates to a method for generating a gas mixture comprising a desired composition.
Chemical solution evaporation device and substrate processing device including the same
A chemical solution vaporization device includes a chemical solution tank including chemical solution vaporization rooms, a chemical solution sensing room, and a chemical solution supply room. A first internal wall separating the plurality of chemical solution vaporization rooms from each other includes a first opening at a lower portion thereof. A second internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution supply room includes a second opening at a lower portion thereof. A third internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution sensing room includes a third opening at a lower portion thereof. And a lower portion of a fourth internal wall separating the chemical solution sensing room from the chemical solution supply room is combined with the lower wall.
PASSIVE GAS MIXER WITH A HOLLOW SCREW
A gas mixer (100), to which a first gas and a second gas are fed, mixes the two fed gases to form a gas mixture. A helical component (2) is arranged in an interior of an outer component (5). A helical mixing cavity (20) is formed between the outer component and the helical component (2). An additional mixing volume (6) is located in the interior of the outer component (5) or in the interior of the helical component (2). One gas is sent through a first feed line (31) to the helical mixing cavity (20), and the other gas is sent through a second feed line (32) to the additional mixing cavity (6). A gas mixture discharge line (40) discharges the produced gas mixture from the helical mixing cavity (20).
PASSIVE GAS MIXER WITH A HOLLOW SCREW
A gas mixer (100), to which a first gas and a second gas are fed, mixes the two fed gases to form a gas mixture. A helical component (2) is arranged in an interior of an outer component (5). A helical mixing cavity (20) is formed between the outer component and the helical component (2). An additional mixing volume (6) is located in the interior of the outer component (5) or in the interior of the helical component (2). One gas is sent through a first feed line (31) to the helical mixing cavity (20), and the other gas is sent through a second feed line (32) to the additional mixing cavity (6). A gas mixture discharge line (40) discharges the produced gas mixture from the helical mixing cavity (20).
Method of feeding gases into a reactor to grow epitaxial structures based on group III nitride metals and a device for carrying out said method
The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.
Method of feeding gases into a reactor to grow epitaxial structures based on group III nitride metals and a device for carrying out said method
The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.
Fluid mixing structure
A respiratory therapy system can have a flow generator adapted to provide gases to a patient. A gas passageway can be located in-line with the flow generator. The gas passageway can have a first portion adapted to receive a first gas and a second portion adapted to receive a second gas. The gas passageway can have a static mixer downstream of the first and second portions.
Fluid mixing structure
A respiratory therapy system can have a flow generator adapted to provide gases to a patient. A gas passageway can be located in-line with the flow generator. The gas passageway can have a first portion adapted to receive a first gas and a second portion adapted to receive a second gas. The gas passageway can have a static mixer downstream of the first and second portions.