A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet.

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

Provided is an apparatus for attaching semiconductor parts. The apparatus includes a substrate loading unit, at least one semiconductor part loader, a first vision examination unit, at least one semiconductor part picker, at least one adhesive hardening unit, and a substrate unloading unit, wherein the substrate loading unit supplies a substrate on which semiconductor units are arranged, the at least one semiconductor part loader supplies semiconductor parts, the first vision examination unit examines arrangement states of the semiconductor units, the at least one semiconductor part picker mounts semiconductor parts in the semiconductor units, the at least one adhesive hardening unit hardens and attaches adhesives interposed between the semiconductor units and the semiconductor parts, and the substrate unloading unit releases the substrate on which semiconductor parts are mounted. The adhesive hardening units restrictively transmit a heat source only to at least one semiconductor unit, which is to be hardened.

A laser processing apparatus includes a support portion, a laser processing head, a vertical movement mechanism, a horizontal movement mechanism, and a controller. The controller controls starting and stopping of emission of a laser light from the laser processing head based on rotation information in a state where a focusing point is positioned at a position along a circumferential edge of an effective region in a target, while rotating the support portion, to perform a circumferential edge process for forming a modified region along the circumferential edge of the effective region in the target.

There is provided a laser processing method for performing laser processing on a wafer having a functional layer on a substrate. The laser processing method includes a blackening step of emitting a pulsed laser beam of a wavelength transparent to the functional layer from a laser oscillator and blackening the functional layer by irradiating the functional layer with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the functional layer is processed such that an overlap ratio of the pulsed laser beam successively applied to the functional layer is equal to or more than 90% and less than 100%, and a groove processing step of forming a laser-processed groove by irradiating the blackened functional layer with the pulsed laser beam and making the blackened functional layer absorb the pulsed laser beam, after performing the blackening step.

Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

A method for assembling components includes assembling a first component including solder bumps with a second component including connectors. The assembly of the components is preceded by pre-treating the first and second components wherein the solder bumps are contacted with a pre-treatment liquid configured to at least partially remove an oxide layer initially present on the solder. The pre-treatment liquid is an aqueous solution containing carboxylic acids or polycarboxylic acids. The assembly of the components is carried out after the pre-treatment in the absence of liquid or gas flux.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.