Device (1) for displacing at least one assembly (2, 2′) between a provisioning zone (3) and a working zone (4) of at least one process chamber (5) of a process chamber apparatus (6) for soldering, in particular for reflow soldering, comprising at least one displacement device (7), wherein the at least one assembly (2, 2′) carries out, at least in sections, a displacement movement (9), or such a displacement movement (9) can be carried out, such that the at least one assembly (2, 2′) is displaced by means of a force (8), in particular pushing force, which is transmitted or generated by the displacement device (7), in particular directly, and acts on the assembly (2, 2′).

Device (1) for displacing at least one assembly (2, 2′) between a provisioning zone (3) and a working zone (4) of at least one process chamber (5) of a process chamber apparatus (6) for soldering, in particular for reflow soldering, comprising at least one displacement device (7), wherein the at least one assembly (2, 2′) carries out, at least in sections, a displacement movement (9), or such a displacement movement (9) can be carried out, such that the at least one assembly (2, 2′) is displaced by means of a force (8), in particular pushing force, which is transmitted or generated by the displacement device (7), in particular directly, and acts on the assembly (2, 2′).

A brazing method for brazing a material without using a flux includes performing brazing in an inert gas atmosphere, in a state in which the material to be brazed is covered with a cover member formed of an upper cover portion covering the whole upper portion of the material to be brazed and side cover portions covering at least some of the side portions of the material to be brazed, with the upper cover portion contacting the upper portion of the material to be brazed, and the material to be brazed and the cover member are held with a heat transmission promoting member formed of an upper heat transmission promoting portion and a lower heat transmission promoting portion, with the upper heat transmission promoting portion contacting the upper cover portion, and with the lower heat transmission promoting portion contacting the lower portion of the material to be brazed.

A die dipping structure includes a plate including a first recessed portion having a first depth and filled with a first flux material. The plate further includes a second recessed portion, isolated from the first recessed portion, with a second depth and filled with a second flux material. The second depth is different from the first depth. The die dipping structure further includes a motor configured to move the plate so as to simultaneously dip a first die and a second die into the flux of the first recessed portion and the flux of the second recessed portion, respectively.

A fan module for a soldering system and a soldering system, in particular for a reflow soldering system, for circulating air in a process channel of the soldering system, the module having a housing-like support part, a first shaft bearing provided in or on the support part, a motor, which includes a stator and a rotor which cooperates with the stator, a rotor shaft provided on the rotor, a fan wheel provided on the rotor shaft and having a second shaft bearing for supporting the rotor shaft, wherein the fan module includes a flange plate, which in the assembled state covers a channel opening in the process channel and which includes an aperture in or on which the second shaft bearing is provided.

A fan module for a soldering system and a soldering system, in particular for a reflow soldering system, for circulating air in a process channel of the soldering system, the module having a housing-like support part, a first shaft bearing provided in or on the support part, a motor, which includes a stator and a rotor which cooperates with the stator, a rotor shaft provided on the rotor, a fan wheel provided on the rotor shaft and having a second shaft bearing for supporting the rotor shaft, wherein the fan module includes a flange plate, which in the assembled state covers a channel opening in the process channel and which includes an aperture in or on which the second shaft bearing is provided.

An apparatus for manufacturing a heat exchanger for a vehicle has a plurality of cooling panels bonded to each other by pressing a cooling panel module where the plurality of cooling panels are stacked vertically, including: a fixing portion for supporting top and bottom ends of the cooling panel module; and a pair of elastic portions that are provided between the top or bottom end of the cooling panel module and the fixing portion, and are arranged symmetrically based on a top or bottom surface of the cooling panel module to compress the cooling panel module.

An apparatus for manufacturing a heat exchanger for a vehicle has a plurality of cooling panels bonded to each other by pressing a cooling panel module where the plurality of cooling panels are stacked vertically, including: a fixing portion for supporting top and bottom ends of the cooling panel module; and a pair of elastic portions that are provided between the top or bottom end of the cooling panel module and the fixing portion, and are arranged symmetrically based on a top or bottom surface of the cooling panel module to compress the cooling panel module.

Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.

Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.