A fabrication method of transparent material is a method of processing a thermosetting transparent material including a disposing step of disposing an uncured thermosetting transparent material, a laser beam irradiation step of irradiating the disposed uncured thermosetting transparent material with a laser beam so that cavitation bubbles are generated in the uncured thermosetting transparent material, and a curing step of performing a curing process on the uncured thermosetting transparent material in which the cavitation bubbles are generated.

A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.

A method for forming a MEMS structure for an inertial sensor from fused silica includes: depositing a conductive layer on one or more selected regions of a first surface of a fused silica substrate, and illuminating areas of the fused silica substrate with laser radiation in a pattern defining features of the MEMS structure for an inertial sensor. A masking layer is deposited at least on the one or more selected regions of the first surface of the fused silica substrate where the conductive layer has been deposited, such that the illuminated areas of the fused silica substrate remain exposed. A first etch of the exposed areas of the fused silica substrate is performed so as to selectively etch the pattern defining features of the MEMS structure for an inertial sensor.

A method of manufacturing a photothermal conversion element includes preparing a solid material and forming a processed region processed by irradiation of the solid material with a laser beam. The forming includes grain refining the solid material to blacken the processed region.

A method for fabricating calcite channels in a nanofluidic device is described. A porous membrane is attached to a substrate. Calcite is deposited in porous openings in the porous membrane attached to the substrate. A width of openings in the deposited calcite is in a range from 50 to 100 nanometers (nm). The porous membrane is etched to remove the porous membrane from the substrate to form a fabricated calcite channel structure. Each channel has a width in the range from 50 to 100 nm.

A device chip manufacturing method includes attaching a wafer to the first surface of a semiconductor ingot, separating the semiconductor ingot into a subject part and a remaining part after attachment, the subject part being attached to the wafer to form a laminated wafer having a front side as an exposed surface of the subject part and a back side as an exposed surface of the wafer, setting a plurality of crossing division lines on the front side of the laminated wafer to thereby define a plurality of separate regions after separation, and next forming a plurality of devices in the respective separate regions, and then dividing the laminated wafer along the division lines after forming the devices, thereby forming the plural device chips including the respective devices.

A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.

A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

A microstructure and a method for manufacturing the same includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.