An anti-reflective article includes a substrate including a surface and a bulk, and an arrangement of anti-reflective nanostructures along the surface of the substrate, each anti-reflective nanostructure of the arrangement of anti-reflective nanostructures being supported by the bulk of the substrate, each anti-reflective nanostructure of the arrangement of anti-reflective nanostructure tapering from the bulk of the substrate to define a respective peak. At least some of the anti-reflective nanostructures of the arrangement of anti-reflective nanostructures are linked with an adjacent anti-reflective nanostructure of the arrangement of anti-reflective nanostructures via a respective interconnection. The respective interconnections are in addition to the bulk of the substrate supporting the anti-reflective nanostructures. The respective interconnections are disposed at or above a midpoint between the peaks of the anti-reflective nanostructures and the bulk of the substrate.

Described are methods for the assembly of monolayer, bilayer, or multi-layer structures composed of homogenous rod-like molecules and particles. Included are methods for tuning physical properties of the mono- or multi-layered structures by changing ionic conditions and the size or concentration of polymer used for self-assembly.

Described herein are metal nanoparticle superstructures and methods and compounds for making the same.

First and second chiplets are positioned along a surface to respectively cover first and second electrodes. The first electrode is activated to cause an attraction force between the first electrode and the first chiplet. The second electrode is deactivated allowing the second chiplet to rotate on the surface. While the first electrode is activated and the second electrode is deactivated, a rotation field is applied to cause the second chiplet to be oriented at a desired orientation angle, the first chiplet being prevented from rotating by the attraction force.

An assembly surface has an array of electrodes arranged such that each of a plurality of chiplets can be positioned to cover at least one of the electrodes. A field generator applies a rotation field that is orthogonal to the clamping force field applied by the electrodes. A processor is operable to determine a desired orientation angle of a first subset of the chiplets and activate one or more of the electrodes so that a second subset of the chiplets different than the first subset is kept from rotating by a clamping force field applied by the one or more of the electrodes. While the clamping force field is being applied, the processor applies the rotation field at the selected angle to cause the first subset of the chiplets to be oriented at the desired orientation angle.

The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

A method for forming a flow channel in a MIO structure includes positioning a plurality of sacrificial spheres along a base substrate, heating a region of the plurality of sacrificial spheres above a melting point of the plurality of sacrificial spheres, thereby fusing the plurality of sacrificial spheres together and forming a solid channel, electrodepositing material between the plurality of sacrificial spheres and around the solid channel, removing the plurality of sacrificial spheres to form the MIO structure, and removing the solid channel to form the flow channel extending through the MIO structure.

An apparatus, comprising a film (103) comprising a network of conductive and/or semi-conductive high aspect ratio molecular structures is presented. The apparatus also comprises a frame (102) arranged to support the film (103) at least at least two support positions so that a free-standing region (101) of the film (103) extends between the at least two support positions. The two or more electrical contact areas electrically coupled to the film (103), and these electrical contact areas are arranged to pass electric charge across the free-standing region (101) of the film (103) at a current between 0.01 and 10 amperes.

3D nanochannel interleaved devices for molecular manipulation are provided. In one aspect, a method of forming a device includes: forming a pattern on a substrate of alternating mandrels and spacers alongside the mandrels; selectively removing the mandrels from a front portion of the pattern forming gaps between the spacers; selectively removing the spacers from a back portion of the pattern forming gaps between the mandrels; filling i) the gaps between the spacers with a conductor to form first electrodes and ii) the gaps between the mandrels with the conductor to form second electrodes; and etching the mandrels and the spacers in a central portion of the pattern to form a channel (e.g., a nanochannel) between the first electrodes and the second electrodes, wherein the first electrodes and the second electrodes are offset from one another across the channel, i.e., interleaved. A device formed by the method is also provided.

The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.