C01B21/0825

PHOSPHOR, METHOD FOR PRODUCING SAME, LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

Provided are a phosphor emitting light having a wavelength of 600 nm or more in the red-to-nearinfrared range when irradiated with visible light or ultraviolet light; a method for producing same; a light emitting element using same; and a light emitting device using same. The phosphor includes an inorganic compound including A element, M element, D element, E element (A is at least one element selected from the group of Mg, Ca, Sr and Ba; M is at least one element selected from the group of Mn, Eu, Ce, Nd, Tb, Dy, Ho, Er, Tm and Yb; D is Si and/or Al; and E is O and/or N) and, if necessary, G element (G is Li), and represented by (A, M).sub.aD.sub.dE.sub.eG.sub.g, (atomic fraction parameters a, d, e and g satisfy 2.4?a?4.8, 17.4?d?22.2, 26.2?e?28.6 and 0?g?3).

Fracture-resistant layered-substrates and articles including the same

Embodiments of a layered-substrate comprising a substrate and a layer disposed thereon, wherein the layered-substrate is able to withstand fracture when assembled with a device that is dropped from a height of at least 100 cm onto a drop surface, are disclosed. The layered-substrate may exhibit a hardness of at least about 10 GPa or at least about 20 GPa. The substrate may include an amorphous substrate or a crystalline substrate. Examples of amorphous substrates include glass, which is optionally chemically strengthened. Examples of crystalline substrates include single crystal substrates (e.g. sapphire) and glass ceramics. Articles and/or devices including such layered-substrate and methods for making such devices are also disclosed.

Decoration member and method for manufacturing same

The present application relates to a decoration member including a pattern layer provided on one surface of the substrate and including a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

Method for preparing spherical aluminum oxynitride powder

A method for preparing spherical aluminum oxynitride powder, comprising the steps of (A) providing an alumina powder and a resin, both of which are then dispersed and dissolved in a solvent to form a mixed slurry; (B) subjecting the mixed slurry to spray drying to form a spherical powder; (C) subjecting the spherical powder to a carbonization treatment under an inert atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to carbothermic reduction in a nitrogen-containing atmosphere at a temperature of 1450 C. to 1550 C.; (E) keeping the spherical powder that has been subjected to carbothermic reduction in the nitrogen-containing atmosphere to carry out a nitridation reaction at a temperature of 1700 C. to 1730 C., forming a nitrided spherical aluminum oxynitride powder; (F) subjecting the nitrided spherical aluminum oxynitride powder to decarbonization in an oxygen-containing atmosphere to form the spherical aluminum oxynitride powder.

Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same

Methods of forming conformal low temperature gate oxides on a HV I/O and a core logic and the resulting devices are provided. Embodiments include providing a HV I/O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfO.sub.x layer over the second silicon oxy-nitride layer and ILs.

Decorative member

The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (Cu.sub.aO.sub.x).

PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, IMAGE DISPLAY DEVICE, AND INDICATOR LAMP FOR VEHICLE

A phosphor includes a crystal phase having a composition represented by Re.sup.xMA.sup.aMB.sup.bMC.sup.cD.sup.dX.sup.e, in which MA includes at least one of Ca, Sr, Ba, Na, K, Y, Gd, or La, MB includes at least one of Li, Mg, or Zn, MC includes at least one of Al, Si, Ga, In, or Sc, D is N (nitrogen) and/or O (oxygen), X includes at least one of F, Cl, Br, or I, Re includes at least one of Eu, Ce, Pr, Tb, or Dy, and a, b, c, d, e, and x satisfy the specific expressions, respectively. In the phosphor, when a content of B (boron) is designated as b (mass ppm), a value of Log.sub.10(b) is 3.5 or less.

Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers

A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.

Decorative member

The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (Cu.sub.aO.sub.x).

Ceramic material having high resistivity and high corrosion resistance, and wafer placement table

A ceramic material that has a high resistivity and high corrosion resistance according to the present invention contains magnesium-aluminum oxynitride and has a carbon content of 0.005 to 0.275 mass %.