Methods for forming alane are described. The method includes addition of toluene at a temperature above the crystallization temperature of alane to a lower temperature solution that includes alane adduct, ether, and toluene. Upon the addition, a crystallization mixture is formed that is at or near the crystallization temperature of alane. The alane of the mixture crystallizes over a period of time to form a high purity alane polymorph.

Methods for forming alane are described. The method includes addition of toluene at a temperature above the crystallization temperature of alane to a lower temperature solution that includes alane adduct, ether, and toluene. Upon the addition, a crystallization mixture is formed that is at or near the crystallization temperature of alane. The alane of the mixture crystallizes over a period of time to form a high purity alane polymorph.

High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula A.sub.xB.sub.yGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B.sub.2O.sub.3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H.sub.2SO.sub.4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si.sub.1-xGe.sub.x alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.

High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula A.sub.xB.sub.yGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B.sub.2O.sub.3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H.sub.2SO.sub.4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si.sub.1-xGe.sub.x alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.

The present disclosure is directed to a system and a method for hydride generation. In some embodiments, the system includes an assembly for introducing hydride generation reagents into a mixing path or mixing container, where the assembly includes first chamber configured to contain a first hydride generation reagent and a second chamber configured to contain a second hydride generation reagent. A first plunger is configured to translate within the first chamber and cause a displacement of the first hydride generation reagent, and a second plunger is configured to translate within the second chamber and cause a displacement of the second hydride generation reagent. The assembly further includes base coupling the first plunger and the second plunger together.

The present disclosure is directed to a system and a method for hydride generation. In some embodiments, the system includes an assembly for introducing hydride generation reagents into a mixing path or mixing container, where the assembly includes first chamber configured to contain a first hydride generation reagent and a second chamber configured to contain a second hydride generation reagent. A first plunger is configured to translate within the first chamber and cause a displacement of the first hydride generation reagent, and a second plunger is configured to translate within the second chamber and cause a displacement of the second hydride generation reagent. The assembly further includes base coupling the first plunger and the second plunger together.

A method for the production of germane includes reacting an oxide of germanium and/or a non-oxide of germanium compound with a borohydride in a base solution. The method permits production of germane from impure germanium-containing starting materials. Catalysts for the reaction include transition metal elements, as well as oxides, hydroxides, halides, and other complexes or compounds of transition metals. Application of heat increases the efficiency of the catalyst. The methods also include production of germane through oxidation of a pure or impure oxide or non-oxide of germanium. The oxidation is effected by contacting the germanium-containing solid phase starting material with an oxidizing solution. The oxidizing solution may be a basic solution comprising a hydroxide or an acidic solution. The oxidation product of the germanium-containing solid phase starting material is converted to germane through an electrochemical or chemical reduction process.

The present invention provides a preparation method of amorphous GeH, and belongs to the field of preparation technologies of amorphous GeH. The preparation method provided in the present invention includes the following step: sealing crystalline GeH, a pressure calibration object, and a pressure transmitting medium in a cavity of a diamond anvil cell, and adjusting pressure in the cavity to obtain amorphous GeH. In the present invention, pressure is applied to the GeH in the sealed diamond anvil cell, to implement amorphization of the GeH at room temperature. In this way, impurities can hardly be found in the preparation method, and pure amorphous GeH can be obtained. In addition, the method provided in the present invention has simple operations and good repeatability.

The present invention provides a preparation method of amorphous GeH, and belongs to the field of preparation technologies of amorphous GeH. The preparation method provided in the present invention includes the following step: sealing crystalline GeH, a pressure calibration object, and a pressure transmitting medium in a cavity of a diamond anvil cell, and adjusting pressure in the cavity to obtain amorphous GeH. In the present invention, pressure is applied to the GeH in the sealed diamond anvil cell, to implement amorphization of the GeH at room temperature. In this way, impurities can hardly be found in the preparation method, and pure amorphous GeH can be obtained. In addition, the method provided in the present invention has simple operations and good repeatability.

Methods for forming alane are described. The method includes addition of toluene at a temperature above the crystallization temperature of alane to a lower temperature solution that includes alane adduct, ether, and toluene. Upon the addition, a crystallization mixture is formed that is at or near the crystallization temperature of alane. The alane of the mixture crystallizes over a period of time to form a high purity alane polymorph.