The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

A method of forming a combinatorial mixed halide perovskite library can include depositing an array of halide perovskite particles on a substrate. The method further includes exposing the array of halide perovskites to a laser to from defects in each of or a selected portion of the halide perovskite particles. The exposure conditions are modified across the array to generate a variation of defect concentration in the halide perovskite particles in the array. The defect containing halide perovskites are then exposed to an ion exchange solution and either anion exchanged or cation exchanged to thereby form a mixed halide perovskite particle.

A method of forming a combinatorial mixed halide perovskite library can include depositing an array of halide perovskite particles on a substrate. The method further includes exposing the array of halide perovskites to a laser to from defects in each of or a selected portion of the halide perovskite particles. The exposure conditions are modified across the array to generate a variation of defect concentration in the halide perovskite particles in the array. The defect containing halide perovskites are then exposed to an ion exchange solution and either anion exchanged or cation exchanged to thereby form a mixed halide perovskite particle.