A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 μm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 μm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d.sub.5/2 as an area percentage is less than or equal to about 25%.

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d.sub.5/2 as an area percentage is less than or equal to about 25%.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.