C01P2002/32

CATHODE MATERIAL AND PROCESS
20220380227 · 2022-12-01 ·

The present invention belongs to the field of battery materials, and relates to a process for preparing a particulate lithium manganese nickel spinel compound, and materials produced by the process. The process of the invention uses Mn-containing precursors, Ni-containing precursors, Li-containing precursors and optionally M-containing precursor which form substantially no NOx ases during calcination. The particulate lithium manganese nickel spinel compound product of the process may find use in a lithium ion battery.

Control of oxygen fugacity in a high pressure solid media assembly using a double capsule

A double capsule assembly includes an outer capsule and an inner capsule configured to be positioned within the outer capsule. The inner capsule is configured to have a sample positioned therein. The double capsule assembly is configured to be placed in a solid media assembly to analyze or synthesize the sample.

Positive Electrode Active Material for Lithium Secondary Battery and Method for Producing the Same

A positive electrode active material includes a lithium transition metal oxide having a spinel crystal structure, and a coating layer positioned on the surface of the lithium transition metal oxide, wherein the coating layer has an orthorhombic structure, and includes an oxide represented by Formula 1. A method for producing the positive electrode active material, a positive electrode including the positive electrode active material, and a lithium secondary battery, the positive electrode active material.

MATERIAL FOR N2O DECOMPOSITION

The present invention concerns a material with a non-stoichiometric spinel-type crystalline structure based on cobalt oxide doped with alkaline elements, its production process for obtaining it by precipitation with controlled washing, and its particular use as a highly active catalyst in the N.sub.2O decomposition reaction. Therefore, we understand that the present invention is in the area of green industry aimed at reducing N.sub.2O emissions into the atmosphere.

Magneto-dielectric materials, methods of making, and uses thereof
11574752 · 2023-02-07 · ·

A magnetic fiber comprises a core comprising a spinel ferrite of formula Me.sub.1-xM.sub.xFe.sub.yO.sub.4, wherein Me is Mg, Mn, Fe, Co, Ni, Cu, Zn, or a combination thereof, x=0 to 0.25, and y=1.5 to 2.5, wherein the core is solid or at least partially hollow; and a shell at least partially surrounding the core, and comprising a Me.sub.1-xM.sub.xFe.sub.y alloy, wherein when the core is solid with Me=Ni and x=0 the magnetic fiber has a diameter of greater than 0.3 micrometer. A magneto-dielectric material having a magnetic loss tangent of less than or equal to 0.03 at 1 GHz comprises a polymer matrix; and a plurality of the magnetic fibers.

Self-decontaminating antimicrobial compositions, articles, and structures, and methods of making and using the same
11572285 · 2023-02-07 · ·

An antimicrobial material including a substrate and an antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide in and/or on the substrate is described, as well as antimicrobial coating materials and coatings formed therefrom. The antimicrobial material may be constituted in an antimicrobial surface of a surface-presenting substrate, to combat transmission and spread of microbial disease, e.g., disease mediated by microbial pathogens such as bacteria, viruses, and fungi. Antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide as described may be contacted with microorganisms to effect inactivation thereof.

NICKEL ZINC COPPER FERRITE FOR VUHF ANTENNA APPLICATION
20220348479 · 2022-11-03 ·

A composition and a solid material is especially suitable for the manufacture of an antenna adapted to operate in the very high frequency and ultra high frequency or V/UHF band. The composition has the formula Ni.sub.aZn.sub.bCu.sub.cCo.sub.dFe.sub.2-δO.sub.4, in which 2(a+b+c+d)+3(2−δ)=8, 0.05<b<0.5, e.g. 0.1<b<0.5, e.g. 0.1<b<0.4, e.g. 0.15<b<0.35, 0.10<c<0.25, preferably 0.15<c<0.25, alternatively c is 0.20, 0.04<d<0.25, preferably 0.06<d<0.25, and more preferably 0.07<d<0.25, and δ<0.05.

Positive manganese lithium oxide-stabilised electrode for a secondary lithium battery and a method for producing same

The present invention provides the compound LiMn.sub.2--x-yNa.sub.xM.sub.yO.sub.4/Na.sub.1-zMnLi.sub.zM.sub.tO.sub.2/Na.sub.2CO.sub.3, to be used as a positive electrode for rechargeable lithium ion battery, where M is a metal or metalloid, 0.0≤x≤0.5; 0.0≤y≤0.5; 0.1≤z≤0.5; 0.0≤t≤0.3; as well as the method for producing it. The synthesis process includes disolving or mixing the precursor metals and then calcining them in air or controlled atmosphere in a temperature range between 250° C. and 1000° C., and for a time range of 0.5 h to 72 h to obtain the composite proposed with the interaction of its three present phases, presenting a high retention capacity during repeated loading/unloading cycles and excellent discharge capacity both at room temperature and up to 55° C.

Lithium cobalt-based positive electrode active material, preparation method thereof, positive electrode and secondary battery including the same

A lithium cobalt-based positive electrode active material is provided. The lithium cobalt-based positive electrode active material includes a core portion including a lithium cobalt-based oxide represented by Formula 1 and a shell portion including a lithium cobalt-based oxide represented by Formula 2, wherein the lithium cobalt-based positive electrode active material includes 2500 ppm or more, preferably 3000 ppm or more of a doping element M based on the total weight of the positive electrode active material. An inflection point does not appear in a voltage profile measured during charging/discharging a secondary battery including the lithium cobalt-based positive electrode active material.

Method for manufacturing sputtering target, method for forming oxide film, and transistor

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.