A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.

The invention relates to perovskite compounds which have surprisingly good emission properties, particularly photoluminescent emission properties, in the blue region of the visible spectrum. These perovskites contain a mixture of cations or a mixture of halides, or both. The invention also relates to a photoactive material containing the perovskite species of the invention; to an optoelectronic device containing the photoactive material of the invention; to a method of producing blue light; and to the use of the photoactive material of the invention to emit blue light or as a phosphor.

Described herein are chemically assembled nanoparticles of a multiferroic material embedded into a conductive (e.g., metal-organic) framework host that allows for tunable qubit spacing and overall architecture. In certain aspects, the composites described herein can function as solid-state qubits. In other aspects, the composites described herein can be implemented in systems used in quantum information processing (QIP). In other aspects, the composites described herein can be used as a quantum sensor.

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1-xA′.sub.xB.sub.1-yB′.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

All inorganic perovskites for short-wave IR (SWIR) devices having improved chemical stability and long-term stability. Improved methods of making all inorganic perovskites for short-wave IR (SWIR) devices are also disclosed herein.

Disclosed herein is a polymeric film, the film comprising a polymeric matrix material, a plurality of perovskite nanocrystals and/or aggregates of perovskite nanocrystals dispersed throughout the polymeric matrix material. There is also disclosed a perovskite polymer resin composition, a perovskite-polymer resin composition, a perovskite ink and a method of forming a luminescent film using any one of the compositions or ink. Preferably, the perovskite material is a lead halide perovskite containing a cation selected from Cs, an alkylammonium ion, or a formamidinium ion. The polymeric matrix is preferably formed from monomers comprising a vinyl or an acrylate group.

A material for an electrode, the material for as well as a method of making the material for an electrode comprising or consisting of a compound of formula (1)

M2Ni1−xCoxO4+δ

and/or of formula (2)

La1−yMyNi1−xCoxO4+δ

where M represents Pr and/or Nd, 0.0≤x≤0.2, 0.25≤δ≤0.3 and 0<y≤10 0.5.

A ceramic membrane for oxidative coupling of methane can include a perovskite oxide and catalyst material on a surface of the membrane.

High photoluminescence, high stability, inorganic perovskite compounds comprising an alkali metal selected from potassium (K), rubidium (Rb), and cesium (Cs); copper (Cu); and at least one halogen selected from chlorine (Cl), bromine (Br), and iodine (I). The perovskites may be free of lead (Pb). The inorganic perovskite compound may be used in an optoelectronic device. The optoelectronic device optionally contains a phosphor such as a blue-emitting phosphor. The inorganic perovskite compound may be used as an anti-counterfeiting nanotaggant applied on or within an object that susceptible to counterfeiting to enable confirmation of an authentic object.

An oxide superconductor according to an embodiment includes an oxide superconducting layer includes a single crystal having a continuous perovskite structure containing at least one rare earth element selected from the group consisting of yttrium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, barium, and copper, containing praseodymium in a part of the site of the rare earth element in the perovskite structure, and having a molar ratio of praseodymium of 0.00000001 or more and 0.2 or less with respect to the sum of the at least one rare earth element and praseodymium; fluorine in an amount of 2.0×10.sup.15 atoms/cc or more and 5.0×10.sup.19 atoms/cc or less; and carbon in an amount of 1.0×10.sup.17 atoms/cc or more and 5.0×10.sup.20 atoms/cc or less.