An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The disclosed technology relates to a ceramic composition and an article formed therefrom. A ceramic article for radio frequency applications is formed of a ceramic material having a chemical formula represented by: Bi.sub.1.0+aY.sub.2.0-a-x-2yCa.sub.x+2yFe.sub.5-x-yM.sup.IV.sub.xV.sub.yO.sub.12 or Bi.sub.1.0+aY.sub.2.0-a-2yCa.sub.2yFe.sub.5-y-zV.sub.yIn.sub.zO.sub.12. The ceramic material has a composition such that a normalized change in saturation magnetization (Δ4πMs), defined as Δ4πMs=[(4πMs at 20° C.)-(4πMs at 120° C.)]/(4πMs at 20° C.), is less than about 0.35.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A ceramic contains, in mass percent: Si.sub.3N.sub.4: 20.0 to 60.0%, ZrO.sub.2: 25.0 to 70.0%, and one or more oxides selected from MgO, Y.sub.2O.sub.3, CeO.sub.2, CaO, HfO.sub.2, TiO.sub.2, Al.sub.2O.sub.3, SiO.sub.2, MoO.sub.3, CrO, CoO, ZnO, Ga.sub.2O.sub.3, Ta.sub.2O.sub.5, NiO, and V.sub.2O.sub.5: 5.0 to 15.0%. The ceramic has a coefficient of thermal expansion as high as that of silicon and an excellent mechanical strength, allows fine machining with high precision, and prevents particles from being produced.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

A method of preparing an ITO ceramic target includes that: In.sub.2O.sub.3 powder with mass fraction of 90˜97 and SnO.sub.2 powder with mass fraction of 10˜3 are ball-milled and mixed with deionized water, diluent, binder and polymer material by a sand mill to obtain an ITO ceramic slurry with a solid content between 70˜80% and a viscosity between 120˜300 mpa.Math.s, with an average particle size D50 of the mixed powder controlled at 100˜300 nm; the ITO ceramic slurry is shaped by a pressure grouting to obtain an ITO ceramic green body with a relative density of 58˜62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and under a degreasing temperature of 700˜800° C., the ITO ceramic target is degreased in an atmospheric oxygen atmosphere for the time set to 12˜36 hours; the temperature increases from the degreasing temperature to the first sintering temperature of 1,600˜1,650° C.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

A ceramic powder material containing: a first garnet-type compound containing Li, La, and Zr; and a second garnet-type compound containing Li, La, and Zr and having a composition different from a composition of the first garnet-type compound, in which the first garnet-type compound and the second garnet-type compound are represented by Formula [1] Li.sub.7-(3x+y)M1.sub.xLa.sub.3Zr.sub.2-yM2.sub.yO.sub.12, where Ml is Al or Ga, M2 is Nb or Ta, the first garnet-type compound satisfies 0≤(3x+y)≤0.5, and the second garnet-type compound satisfies 0.5<(3x+y)≤1.5.

Provided are a composite oxide powder from which dense solid electrolyte objects having a high ion conductivity can be produced and a method for producing the composite oxide powder. The composite oxide powder is composed of particles comprising lithium (Li), lanthanum (La), zirconium (Zr), and oxygen (O) and having a cubic garnet-type crystal structure, and has a volume particle size distribution in which the 50% diameter (D50) is 1,000 nm or smaller, the composite oxide powder having a pyrochlore phase content of 10 mass % or less.