A device and method for absorbing electromagnetic waves can include a honeycomb sheet formed by a plurality of interconnected hexagon cells arranged in rows. The hexagon cells are made up of sidewalls, each sidewall formed by two surfaces that converge at a top of the sidewall and diverge from the top to a bottom of the sidewall such that a thickness of the sidewalls increases from top to bottom and an angle forms between the two surfaces at the top of the sidewall. In an example, the angle is about 8 degrees. The honeycomb sheet can be coated with a magnetic, composite coating to increase electromagnetic shielding. An example coating includes magnetic multi-granular nanoclusters (MGNC) and multi-walled carbon nanotubes (MWCNT). A base layer can be attached to the honeycomb sheet for mechanical stability and additional absorption. The device is suitable for radar absorbing materials (RAM) for aerospace and military applications.

A cubic boron nitride sintered material includes: more than or equal to 50 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 50 volume % of a binder phase, and when an oxygen content is measured in a direction perpendicular to an interface between cubic boron nitride grains using TEM-EDX, a first region having an oxygen content larger than an average value of an oxygen content of a cubic boron nitride grain exists, the interface exists in the first region, and a length of the first region along the direction perpendicular to the interface is more than or equal to 0.1 nm and less than or equal to 10 nm.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and compressed graphite dispersed in the polycrystalline diamond.

Ceramic-bonded diamond composite particle includes a plurality of diamond grains and silicon carbide reaction bonded to the diamond grains having a composition of 60-90 wt. % diamond, 10-40 wt. % silicon carbide, ≦2 wt. % silicon. Particles are formed by processes that forms granules in a pre-consolidation process, forms a densified compact including ceramic-bonded diamond composite material in a consolidation process or forms ceramic-bonded diamond composite material directly, and a post-consolidation process in which the densified compact or ceramic-bonded diamond composite material is mechanically broken to form a plurality of the particles. Inert or active material can be incorporated into the densified compact or coated on granules to reduce the number and extent of diamond to silicon carbide bonding occurring in the consolidation process and make the ceramic-bonded diamond composite material more friable and easily breakable into composite particles.

A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

A wavelength converter 100 includes: a first phosphor 1 composed of an inorganic phosphor activated by Ce.sup.3+; and a second phosphor 2 composed of an inorganic phosphor activated by Ce.sup.3+ and different from the first phosphor. At least one of the first phosphor and the second phosphor is particulate. The first phosphor and the second phosphor are bonded to each other by at least one of a chemical reaction in a contact portion between the compound that constitutes the first phosphor and a compound that constitutes the second phosphor and of adhesion between the compound that constitutes the first phosphor and the compound that constitutes the second phosphor.

Provided is a dielectric ceramic composition comprising a main component of forsterite and calcium strontium titanate. A content ratio of forsterite in the main component is from 84.0 to 92.5 parts by mole, and a content ratio of calcium strontium titanate is from 7.5 to 16.0 parts by mole. (Sr+Ca)/Ti in the calcium strontium titanate is from 1.03 to 1.20 in terms of a molar ratio. With respect to a total of 100 parts by mass of the main component and a subcomponent except for Li-containing glass, from 2 to 10 parts by mass of Li-containing glass is added. The Li-containing glass includes Al.sub.2O.sub.3 in an amount of from 1% by mass to 10% by mass.

The present disclosure describes a lithium solid state battery, including a cathode that includes an active material such as lithium, and an additive having a lower melting point than the active material. The additive can provide a composite cathode where a cathode-electrolyte interphase has high electronic and ionic conductivity, good mechanical deformability, and high oxidation potential.