The present invention relates to a suspension comprising 50-95% by weight of the total suspension (w/w) of at least one metallic material and/or ceramic material and/or polymeric material and/or solid carbon containing material; and at least 5% by weight of the total suspension of one or more fatty acids or derivatives thereof. In addition, the invention relates to uses of such suspension in 3D printing processes.

Paste compositions for additive manufacturing and methods for the same are provided. The paste composition may include an organic vehicle, and one or more powders dispersed in the organic vehicle. The organic vehicle may include a solvent, a polymeric binder, a thixotropic additive, and a dispersant. The organic vehicle may be configured to provide the paste composition with a suitable viscosity. The organic vehicle may also be configured to provide a stable paste composition for a predetermined period of time.

Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Porous, binderless ceramic surface modification materials are described, and applications of use thereof. The ceramic surface material is in the form of an interconnected network of porous ceramic material on a substrate. The ceramic material may include a metal oxide, a metal hydroxide, and/or hydrates thereof, or a metal carbonate or metal phosphate, on a substrate surface. The substrate may be in the form of a metal or polymer particulate, powder, extrudate, or flakes.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.