Patent classifications
C04B35/475
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, VIBRATION WAVE MOTOR, OPTICAL INSTRUMENT, VIBRATION APPARATUS, DUST REMOVING APPARATUS, IMAGING APPARATUS AND ELECTRONIC DEVICE
A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4−L.sub.5)/L.sub.5≧0.05 and (L.sub.8−L.sub.9)/L.sub.9≧0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:
(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3 (1)
wherein 0≦x≦0.2, 0≦y≦0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, VIBRATION WAVE MOTOR, OPTICAL INSTRUMENT, VIBRATION APPARATUS, DUST REMOVING APPARATUS, IMAGING APPARATUS AND ELECTRONIC DEVICE
A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4−L.sub.5)/L.sub.5≧0.05 and (L.sub.8−L.sub.9)/L.sub.9≧0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:
(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3 (1)
wherein 0≦x≦0.2, 0≦y≦0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.
Piezoelectric composition and piezoelectric element
The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure,
(Bi.sub.(0.5x+y+z)Na.sub.0.5x).sub.m(Ti.sub.(x+0.5y)Mg.sub.0.5yMe.sub.z)O.sub.3
wherein, 0.05≦x≦0.7, 0.01≦y≦0.7, 0.01≦z≦0.6, 0.75≦m≦1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.
PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE
A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3≧Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is α and α×Tc3+(1−α)×Tc2 is Tc4, |Tc4−Tc2|≦50° C.
PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE
A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3≧Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is α and α×Tc3+(1−α)×Tc2 is Tc4, |Tc4−Tc2|≦50° C.
DIELECTRIC THIN FILM, DIELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD AND INKJET PRINTER DEVICE
Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.
DIELECTRIC THIN FILM, DIELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD AND INKJET PRINTER DEVICE
Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.
PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE
A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.
Lead-free piezoelectric material
A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z≠0.
Lead-free piezoelectric material
A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z≠0.