A material comprising a group of formula (I): (I) wherein: X and Y are each independently selected from S, O or Se; Ar1, Ar2, Ar3 and Ar4 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group or are absent; A.sup.1 and A.sup.2 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group, a non-aromatic 6-membered ring having ring atoms selected from C, N, S and O or are absent; R.sup.1 is H or a substituent; R.sup.2 and R.sup.3 are each independently H or a substituent; and * represents a point of attachment to a hydrogen or non-hydrogen substituent.

##STR00001##

There is a polymeric photovoltaic cell (or solar cell) with inverted structure having an anode; an anodic buffer layer; an active layer having at least one photoactive organic polymer as electron-donor and at least one electron-accepting organic compound; a cathodic buffer layer; and a cathode. The at least one photoactive organic polymer is selected from conjugated polymers comprising an anthraditiophenic derivative having a general formula (I):

##STR00001##

The polymeric photovoltaic cell (or solar cell) with inverted structure shows good values of power conversion efficiency (PCE) (η) and can be advantageously used in the construction of photovoltaic modules (or solar modules), either on a rigid support or on a flexible support.

An osmium-containing conjugated polymer and methods thereof. A structural formula of the osmium-containing conjugated polymer is formula I, a reaction formula of the osmium-containing conjugated polymer is a formula II.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.

##STR00001##

Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

A composition which is useful for producing a light emitting device having excellent external quantum efficiency contains two or more compounds represented by the formula (C-1) and a phosphorescent compound, in which at least one of the compounds represented by the formula (C-1) is a compound in which R.sup.C is a group represented by the formula (C′-1). ##STR00001##
Ring R.sup.1C and Ring R.sup.2C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C represents an oxygen atom, a sulfur atom or a group represented by the formula (C′-1). ##STR00002##
Ring R.sup.3C and Ring R.sup.4C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C′ represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom.

Disclosed are an organic thin film including a semiconducting polymer including a ligand that is metal-coordination bondable or is metal-coordination bonded and an elastomer including a ligand that is metal-coordination bondable or is metal-coordination bonded, wherein the semiconducting polymer and the elastomer are configured to be dynamic intermolecular bonded by a metal-coordination bond, an organic sensor, and an electronic device.

This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element. ##STR00001## {R.sup.1-R.sup.6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc. Meanwhile, one of R.sup.1-R.sup.4 is a sulfonic acid group and at least one of the remaining R.sup.1-R.sup.4 is a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc., and m and n are numbers that satisfy 0≤m≤1, 0≤n≤1, and m+n=1.}

A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification. At least one of A.sup.1, A.sup.2, and A.sup.3 is not hydrogen.

An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.
—Ar—O—(CH.sub.2).sub.a—O—CH.sub.2—X  (1)
—Ar—(CH.sub.2).sub.b—O—CH.sub.2—X  (2)
—Ar—O—(CH.sub.2).sub.c—X  (3)

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.