Provided is a novel polishing composition. The polishing composition comprises a water-soluble polymer that at least comprises a vinyl alcohol-based resin of which a 4% aqueous solution has a viscosity of 15 mPa.Math.s or more at 20° C.

Provided is a novel polishing composition. The polishing composition comprises a water-soluble polymer that at least comprises a vinyl alcohol-based resin of which a 4% aqueous solution has a viscosity of 15 mPa.Math.s or more at 20° C.

A polishing slurry according to the present invention is a polishing slurry for polishing a polishing object including a resin, wherein the polishing slurry includes alumina abrasives and silica abrasives, the silica abrasives include aggregate particles composed of a plurality of primary particles of colloidal silica, and an average particle size of the primary particles is smaller than a median size of the alumina abrasives.

A polishing slurry according to the present invention is a polishing slurry for polishing a polishing object including a resin, wherein the polishing slurry includes alumina abrasives and silica abrasives, the silica abrasives include aggregate particles composed of a plurality of primary particles of colloidal silica, and an average particle size of the primary particles is smaller than a median size of the alumina abrasives.

A polishing slurry according to the present invention is a polishing slurry for polishing copper or a copper alloy, the polishing slurry including abrasives, an organic acid, an oxidizing agent, and alkali. The polishing slurry further includes polycarboxylic acid, and alkylbenzenesulfonic acid, in which a concentration of the polycarboxylic acid is 0.1 to 0.5 mass % in terms of concentration of sodium polycarboxylate, and a concentration of the alkylbenzenesulfonic acid is 0.3 mass % or more in terms of concentration of alkylbenzenesulfonate triethanolamine.

A polishing slurry according to the present invention is a polishing slurry for polishing copper or a copper alloy, the polishing slurry including abrasives, an organic acid, an oxidizing agent, and alkali. The polishing slurry further includes polycarboxylic acid, and alkylbenzenesulfonic acid, in which a concentration of the polycarboxylic acid is 0.1 to 0.5 mass % in terms of concentration of sodium polycarboxylate, and a concentration of the alkylbenzenesulfonic acid is 0.3 mass % or more in terms of concentration of alkylbenzenesulfonate triethanolamine.

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.