A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.

There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot composite material, and an optical film and a backlight module using the same are provided. The quantum dot composite material includes a curable polymer and a plurality of quantum dots dispersed in the curable polymer. Based on the total weight of the curable polymer being 100%, the curable polymer includes 15 wt % to 40 wt % of monofunctional group acrylic monomer, 15 wt % to 40 wt % of multifunctional group acrylic monomer, 5 wt % to 35 wt % of mercaptan functional group monomer, 1 wt % to 5 wt % of photoinitiator, 10 wt % to 30 wt % of acrylic oligomer, and 5 wt % to 25 wt % of scattering particles.

Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

A light emitting thin film and a manufacturing method thereof, a light emitting device and a displaying substrate, which relates to the technical field of displaying. The light emitting thin film includes a polymer (1) and a quantum dot (2) bonded to the polymer (1); the quantum dot (2) includes a metal nanoparticle (3) and a core-shell structure connected to the metal nanoparticle (3); and the metal nanoparticle (3) is bonded to the polymer (1) by a sulfide bond.

A composite quantum-dot optical film comprises a quantum-dot layer and a composite structure disposed on the quantum-dot layer, wherein the composite structure comprises a first substrate, a second substrate, and a first barrier layer, wherein each of the first substrate and the second substrate comprises a polymer material, wherein the barrier layer being made of organic material and capable of being water-resistant is disposed between the first substrate and the second substrate.

A composite quantum-dot optical film comprises a quantum-dot layer and a composite structure disposed on the quantum-dot layer, wherein the composite structure comprises a first substrate, a second substrate, and a first barrier layer, wherein each of the first substrate and the second substrate comprises a polymer material, wherein the barrier layer being made of organic material and capable of being water-resistant is disposed between the first substrate and the second substrate.