A coating composition includes: (i) a film-forming resin; (ii) an infrared reflective pigment; and (iii) an infrared fluorescent pigment or dye different from the infrared reflective pigment. A multi-layer coating including the coating composition, and a substrate at least partially coated with the coating composition is also disclosed. A method of detecting an article at least partially coated with the coating composition is also disclosed.

A coating composition includes: (i) a film-forming resin; (ii) an infrared reflective pigment; and (iii) an infrared fluorescent pigment or dye different from the infrared reflective pigment. A multi-layer coating including the coating composition, and a substrate at least partially coated with the coating composition is also disclosed. A method of detecting an article at least partially coated with the coating composition is also disclosed.

A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

A light-emitting particle comprising a core and a composite shell layer in contact with and surrounding the core wherein the composite shell layer comprises silica and a light-emitting polymer distributed across the thickness of the composite shell layer.

The application discloses a method for preparing a nano-quantum dot, a nano-quantum dot material, the application thereof and a quantum dot article, and relates to the technical field of quantum dot material preparation. The method for preparing the nano-quantum dot includes the following steps: rapidly solidifying a high-temperature melt in which a carrier corresponding to a target product ion/atomic group/molecular group is dissolved to obtain a carrier in which the target product nano-quantum dot is embedded. The nano-quantum dot material is prepared by using the method. The nano-quantum dot material is applied to the fields of luminescent devices, optical biological marks, disease detection, semiconductors or photoelectricity. Moreover, a quantum dot article containing the nano-quantum dot material is provided.

The application discloses a method for preparing a nano-quantum dot, a nano-quantum dot material, the application thereof and a quantum dot article, and relates to the technical field of quantum dot material preparation. The method for preparing the nano-quantum dot includes the following steps: rapidly solidifying a high-temperature melt in which a carrier corresponding to a target product ion/atomic group/molecular group is dissolved to obtain a carrier in which the target product nano-quantum dot is embedded. The nano-quantum dot material is prepared by using the method. The nano-quantum dot material is applied to the fields of luminescent devices, optical biological marks, disease detection, semiconductors or photoelectricity. Moreover, a quantum dot article containing the nano-quantum dot material is provided.

A far infrared (FIR)-emitting composition includes a first polymer component and a silicon dioxide composite particle which is prepared by subjecting a tetraalkoxysilane and a compound represented by Formula (A) to hydrolysis and condensation polymerization:

Y—Si(OR.sup.a).sub.3  (A),

wherein each R.sup.a independently represents a C.sub.1-4 alkyl group or a C.sub.1-4 alkanoyl group, Y represents X—R.sup.1—, a non-substituted C.sub.1-18 linear alkyl group or a non-substituted C.sub.3-18 branched alkyl group, and X and R.sup.1 are defined as set forth in the Specification and Claims. A FIR-emitting fiber including the FIR-emitting composition is also disclosed.

Provided is an organic light emitting diode display device. The organic light emitting diode display device includes a flexible substrate, including a display region, a first barrier region and a second barrier region, wherein the first barrier region is located between the display region and the second barrier region, and a barrier is disposed on the flexible substrate of the second barrier region; wherein a groove is formed in the flexible substrate of the first barrier region, and an organic light emitting diode unit is disposed on the flexible substrate of the display region.

Provided is an organic light emitting diode display device. The organic light emitting diode display device includes a flexible substrate, including a display region, a first barrier region and a second barrier region, wherein the first barrier region is located between the display region and the second barrier region, and a barrier is disposed on the flexible substrate of the second barrier region; wherein a groove is formed in the flexible substrate of the first barrier region, and an organic light emitting diode unit is disposed on the flexible substrate of the display region.

Production of silicon quantum dots by an ultraviolet method with carboxylic acid or carboxlic acid salt reactants, which can be modified for further applications with possible methods in an aqueous medium with a silicon precursor using the ultraviolet (UV-Vis) technique.