Polycrystalline diamond compacts having parting compound within the interstitial volumes are disclosed herein. In one embodiment, a polycrystalline diamond compact includes a polycrystalline diamond body having a plurality of diamond grains bonded together in diamond-to-diamond bonds, interstitial volumes positioned between the adjacent diamond grains, and a parting compound positioned in at least a portion of the interstitial volumes of the polycrystalline diamond body.

Polycrystalline diamond compacts having interstitial diamonds and methods of forming polycrystalline diamond compact shaving interstitial diamonds with a quench cycle are described herein. In one embodiment, a polycrystalline diamond compact includes a substrate and a polycrystalline diamond body attached to the substrate. The polycrystalline diamond body includes a plurality of inter-bonded diamond grains that are attached to one another in an interconnected network of diamond grains and interstitial pockets between the inter-bonded diamond grains, and a plurality of interstitial diamond grains that are positioned in the interstitial pockets. Each of the plurality of interstitial diamond grains are attached to a single diamond grain of the interconnected network of diamond grains or other interstitial diamond grains.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

A method of manufacturing polycrystalline abrasive elements consisting of micron, sub-micron or nano-sized ultrahard abrasives dispersed in micron, sub-micron or nano-sized matrix materials. A plurality of ultrahard abrasive particles having vitreophilic surfaces are coated with a matrix precursor material in a refined colloidal process and then treated to render them suitable for sintering. The matrix precursor material can be converted to an oxide, nitride, carbide, oxynitride, oxycarbide, or carbonitride, or an elemental form thereof. The coated ultrahard abrasive particles are consolidated and sintered at a pressure and temperature at which they are crystallographically or thermodynamically stable.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.

A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A material 100 for an anti-theft device is described. The material 100 comprises a binder 102, a first type of particles 104, a second type of particles 106, and graphene layer 114 between the binder and each of the first type of particles 104 and second type of particles 106. The first type of particles 104 are selected from at least one of diamond and cubic boron nitride ‘CBN’, and the second type of hard particles are selected from at least one of a metallic carbide and a ceramic material. The first particles resist a cutting action of a cutting tool and the second particles degrade the cutting tool during the cutting action. The graphene bonds the particles to the binder to prevent the particles being dislodged by a cutting action. The result of the combination of these actions is to delay the time for an operator of a cutting tool to cut through the material 100.

A cubic boron nitride sintered material includes: more than or equal to 80 volume % and less than or equal to 96 volume % of cubic boron nitride grains; and a binder, wherein the binder includes tungsten carbide, cobalt, and an aluminum compound, and Ha/Hb≥0.40 is satisfied, where Hb represents a hardness of the cubic boron nitride sintered material and Ha represents a hardness of the cubic boron nitride sintered material after performing acid treatment onto the cubic boron nitride sintered material to substantially remove the binder in the cubic boron nitride sintered material.