A method for making a wire grid polarizer (WGP) can provide WGPs with high temperature resistance, robust wires, oxidation resistance, and corrosion protection. In one embodiment, the method can comprise: (a) providing an array of wires on a bottom protection layer; (b) applying a top protection layer on the wires, spanning channels between wires; then (c) applying an upper barrier-layer on the top protection layer and into the channels through permeable junctions in the top protection layer. In a variation of this embodiment, the method can further comprise applying a lower barrier-layer before applying the top protection layer. In another variation, the bottom protection layer and the top protection layer can include aluminum oxide. In another embodiment, the method can comprise applying on the WGP an amino phosphonate then a hydrophobic chemical.

A coated cutting tool includes a substrate with a coating including a (Ti,Al)N layer having an overall composition (Ti.sub.xAl.sub.1-x)N, 0.34≤x≤0.65. The (Ti,Al)N layer contains columnar (Ti,Al)N grains with an average grain size of from 10 to 100 nm. The (Ti,Al)N layer also includes lattice planes of a cubic crystal structure. The (Ti,Al)N layer shows a pattern in electron diffraction analysis, wherein there is a diffraction signal existing, which is shown as a peak (P) in an averaged radial intensity distribution profile having its maximum within a scattering vector range of from 3.2 to 4.0 nm.sup.−1, the full width half maximum (FWHM) of the peak (P) being from 0.8 to 2.0 nm.sup.−1.

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.

There are provided a ferroelectric thin film represented by a chemical formula M1.sub.1-XM2.sub.XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

An ultraviolet light-resistant article that includes: a substrate having a glass or glass-ceramic composition and first and second primary surfaces; an ultraviolet light-absorbing element having a an absorptivity greater than 50% at wavelengths from about 100 nm to about 380 nm and a thickness between about 10 nm and about 100 nm; and a dielectric stack formed with a plasma-enhanced process. Further, the light-absorbing element is between the substrate and the dielectric stack. Alternatively, the light-absorbing element can include one or more ultraviolet light-resistant layers disposed within the dielectric stack over the first primary surface.

An optical device includes, in sequence, a surface formed of a metal oxide, a samarium oxide-containing layer in contact with the surface formed of a metal oxide, and a magnesium fluoride-containing layer in contact with the samarium oxide-containing layer so as to suppress optical absorption resulting from high-rate sputter deposition of a magnesium fluoride-containing layer on a surface formed of a metal oxide.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

A coated article includes a substrate, a first dielectric layer, a first metallic layer, a first primer layer, a second dielectric layer, a second metallic layer, a second primer layer, a third dielectric layer, a third primer layer, a third metallic layer, and a fourth dielectric layer. The total combined thickness of the metallic layers is at least 30 nanometers and no more than 60 nanometers. The article can have a sheet resistance of less than 0.85 Ω/□, a visible light reflectance of not more than 10%, and a visible light transmittance of at least 70%.

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less

In a general aspect, a ceramic thin film with nanotwinned regions at a tunable volume fraction is manufactured. In some aspects, a method for manufacturing a ceramic thin film on a surface of a substrate in an evacuated chamber is disclosed. The ceramic thin film includes crystalline grains; and each of the crystalline grains includes one or more nanotwinned regions. The one or more nanotwinned regions have a volume fraction in a range of 30-80% of the ceramic thin film. The ceramic thin film comprises titanium, nitrogen, and boron. A plurality of targets including a plurality of sputtering materials is prepared. A gas atmosphere in the evacuated chamber is formed. Electric power is supplied to the plurality of targets to cause co-sputtering of the plurality of sputtering materials to form the ceramic thin film with the one or more nanotwinned regions.

Disclosed in the embodiments of the present application are a microelectrode of a gene sequencing chip, a manufacturing method therefor, and a gene sequencing chip. The microelectrode comprises a substrate, a current collector layer formed on the substrate, and an electrode layer formed on the current collector layer; the current collector layer comprises a transition metal thin film or a nitride thin film thereof or a composite thin film of a transition metal and nitride thereof, and the electrode layer comprises a nitrogen oxide thin film of the transition metal, which is formed on the transition metal thin film or the nitride thin film thereof or the composite thin film of the transition metal and nitride thereof The embodiments of the present application improve the per unit area voltage driving capabilities of a microelectrode in a gene sequencing chip, can meet requirements for an ultra-high number of cycles, and improve the throughput and stability of a gene sequencing chip.