A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

The present invention refers to a graded barrier film comprising a layered structure, wherein the layered structure comprises a first layer consisting of metal oxide; an intermediate layer consisting of metal nitride or metal oxynitride which is arranged on the first layer; and a third layer consisting of a metal oxide which is arranged on the intermediate layer. The present invention further refers to a sputtering method for manufacturing this graded barrier film and a device encapsulated with this graded barrier film.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.0.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

Provided is an antireflective-film attached transparent substrate, which contains a transparent substrate having two principal surfaces and an antireflective film formed on one of the principal surfaces of the transparent substrate, in which the antireflective-film attached transparent substrate has a luminous transmittance being in a range of 20% to 85% and a b* value of a transmission color being 5 or smaller under a D65 light source, and the antireflective film has a luminous reflectance being 1% or lower and a sheet resistance being 10.sup.4/ or higher.

A hard lubrication film, with which a surface of a base material is coated, has two or more alternately laminated layers that are one or more A-layers made of (Cr.sub.aMo.sub.bW.sub.cV.sub.dB.sub.e).sub.1x.sub.yC.sub.xN.sub.y and one or more B-layers made of (Cr.sub.aMo.sub.bW.sub.cV.sub.dB.sub.e).sub.1xyzC.sub.xN.sub.yO.sub.z. Atom ratios a, b, c, d, e=1abcd, x+y, and y related to A-layers satisfy 0.2a0.7, 0.05b0.6, 0c0.3, 0d0.05, 0e0.05, 0.3x+y0.6, and 0y0.6, respectively. Atom ratios a, b, c, d, e=1abcd, x, y, z, and x+y+z related to B-layers satisfy 0.2a0.7, 0.05b0.6, 0c0.3, 0d0.05, 0e0.05, 0x0.6, 0y0.6, 0<z0.6, and 0.3x+y+z0.6, respectively. Each A-layer has a film thickness within a range of 2 nm or more to 1000 nm or less, each B-layer has a film thickness within a range of 2 nm or more to 500 nm or less, and wherein the hard lubrication film has a total film thickness within a range of 0.1 m or more to 10.0 m or less.

The present invention relates to coated sliding parts having coating systems which allow better sliding performance under dry and/or under lubricated conditions. The coating systems according to the present invention being characterized by having an outermost layer whichis a smooth oxide-containing layer in case of sliding applications under lubricated conditions, oris a self-lubricated layer comprising molybdenum nitride, in case of sliding applications under dry or lubricated conditions, is a self lubricated layer with a structured surface comprising a multitude of essentially circular recesses with diameters of several micrometers or below, the recesses randomly distributed over the surface.

Provided is an antireflective-film attached transparent substrate, which contains a transparent substrate having two principal surfaces and an antireflective film formed on one of the principal surfaces of the transparent substrate, in which the antireflective-film attached transparent substrate has a luminous transmittance being in a range of 20% to 85% and a b* value of a transmission color being 5 or smaller under a D65 light source, and the antireflective film has a luminous reflectance being 1% or lower and a sheet resistance being 10.sup.4/ or higher.

The present disclosure provides a thin film transistor, a thin film transistor array substrate, and a display apparatus, and their fabrication methods. The thin film transistor is formed by forming a source and drain electrode structure. To form the source and drain electrode structure, at least one metal film is formed using a target of a metal element in a sputtering chamber. A gas is introduced in the sputtering chamber to in-situ react with the metal element to form an anti-reflection layer over the at least one metal film.