Provided herein is an electric Al—Zr—Mn alloy-plating bath which comprises (A) an aluminum halide; (B) one or at least two kinds of compounds selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N′-dialkyl-imidazolium halides, N-alkyl-pyrazolium halides, N,N′-dialkyl-pyrazolium halides, N-alkylpyrrolidinium halides and N,N-dialkyl-pyrrolidinium halides; (C) a zirconium halide; and (D) a manganese halide, in which the molar ratio of the aluminum halide (A) to the compound (B) ranges from 1:1 to 3:1. The plating bath never involves any risk of causing an explosion and can provide a smooth and fine Al—Zr—Mn alloy-plated film. Moreover, the resulting film has high resistance to corrosion even when it does not contain any chromium and therefore, it is quite suitable from the viewpoint of the environmental protection and it can thus be used in a wide variety of applications including the plating of parts for motorcars, and the plating of parts for electrical appliances.

A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator (3030) rotates the substrate holder (3003) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator (3030) rotates the substrate holder (3003) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

There are provided an anodizing method by which straight micropores can be formed and a manufacturing method for an anisotropic conductive member in which a filling defect of a conductive material is suppressed. The anodizing method is a method including subjecting a surface of a valve metal plate to a plurality of times of anodization and forming an anodized film having micropores present in a thickness direction of the valve metal plate and having a barrier layer present in the bottom part of the micropores, on the surface of the valve metal plate. In steps of second and subsequent times of anodization of the plurality of times of anodization, a current increasing period and a current keeping period are continuous. The current increasing period is a period in which a quantity of current increase is more than 0 amperes per square meter per second and 0.2 amperes per square meter per second or less, and which is 10 minutes or less. A current is kept at a constant value during a current keeping period, and the constant value is equal to or less than a maximum current value during the current increasing period.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.