Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

Disclosed is a method of preparing single crystal ingot of barium zirconium oxide. The method includes preparing a cylindrical BaZrO.sub.3 ceramic by pulverizing a BaZrO.sub.3 compound into a powder and sintering the same into a cylindrical ceramic form, ii) fixing two cylindrical BaZrO.sub.3 ceramics to an optical floating zone furnace, joining the two cylindrical BaZrO.sub.3 ceramics together and melting the junction at a temperature of 2,600 to 3,500° C. using light emitted from a xenon lamp or laser, and after the melting, moving the two cylindrical BaZrO.sub.3 ceramics in a direction parallel to an axis of rotation thereof, enabling the molten junction to be solidified, and thereby growing a single crystal.

Disclosed is a method of preparing single crystal ingot of barium zirconium oxide. The method includes preparing a cylindrical BaZrO.sub.3 ceramic by pulverizing a BaZrO.sub.3 compound into a powder and sintering the same into a cylindrical ceramic form, ii) fixing two cylindrical BaZrO.sub.3 ceramics to an optical floating zone furnace, joining the two cylindrical BaZrO.sub.3 ceramics together and melting the junction at a temperature of 2,600 to 3,500° C. using light emitted from a xenon lamp or laser, and after the melting, moving the two cylindrical BaZrO.sub.3 ceramics in a direction parallel to an axis of rotation thereof, enabling the molten junction to be solidified, and thereby growing a single crystal.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

One or more embodiments relate to a method for controlling fiber growth and fiber diameter in a laser heated pedestal growth (LHPG) system so as to provide long, continuous single-crystal optical fibers of uniform diameter. The method generally provides three independent parameter feedback controls to control the molten zone height, laser power, and fiber drawing rates simultaneously in order to reduce the mismatch between instantaneous diameter changes and current diameter. The method permits the growth of fibers with non-uniform diameters along the fiber's length. The method also provides the capability to stop the LHPG system, remove the exhausted pedestal feedstock with a second pedestal feedstock, and restart the LHPG system to provide a continuous fiber.

A method of additive manufacturing a structure on a pre-existing includes disposing the pre-existing component in a bed of powdery base material and levelling the component, such that a manufacturing plane of the component can be recoated with the base material and alternatingly recoating and irradiating the manufacturing plane with an energy beam in order to additively build up the structure, wherein the irradiation is carried out in that the manufacturing plane is scanned by the beam in a non-continuous way, wherein, for the irradiation according to a second vector for the structure, the beam is either only guided parallel with respect to a previous first vector, or the irradiation process is paused after the irradiation of the first vector for a time span between 1/10 second to 2 seconds until the irradiation is continued with the second vector.

A single-crystal production equipment which includes, at least: a raw material supply apparatus which supplies a granular raw material to a melting apparatus positioned therebelow; the melting apparatus heats and melts the granular raw material to generate a raw material melt and supplies the raw material melt into a single-crystal production crucible positioned therebelow; and a crystallization apparatus which includes the single-crystal production crucible in which a seed single crystal is placed on the bottom, and a first infrared ray irradiation equipment which irradiates an infrared ray to the upper surface of the seed single crystal in the single-crystal production crucible, and the single-crystal production equipment is configured such that the raw material melt is dropped into a melt formed by irradiating the upper surface of the seed single crystal with the infrared ray, and a single crystal is allowed to precipitate out of the thus formed mixed melt.