A method of forming a semiconductor structure is provided. The method includes etching a trench in a template layer over a substrate, forming a seed structure over a bottom surface of the trench, forming a dielectric cap over the seed structure, and growing a single crystal semiconductor structure within the trench using a vapor liquid solid epitaxy growth process. The single crystal semiconductor structure is grown from a liquid-solid interface between the seed structure and the bottom surface of the trench.

A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

The present invention reduces warpage of a Group III nitride semiconductor crystal in a method for producing a Group III nitride semiconductor crystal on a seed substrate through a flux method. A Group III nitride semiconductor is grown so that the total Al amount at the interface is not more than 310.sup.14/cm.sup.2, and the total Si amount at the interface is not more than 510.sup.14/cm.sup.2. Here, the total amount at the interface refers to a total number of atoms per unit area of an interface between the grown Group III nitride semiconductor and the seed substrate. Thus, warpage can be reduced by growing a Group III nitride semiconductor through a flux method.

A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a SiC solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the SiC solution a SiC solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the SiC solution to grow a SiC single crystal from the (0001) face.

There is provided a semiconductor substrate including: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer.

An organic thin film includes an organic crystalline phase, where the organic crystalline phase defines a surface having a surface roughness (R.sub.a) of less than approximately 10 micrometers over an area of at least approximately 1 cm.sup.2. The organic thin film may be manufactured from an organic precursor and a non-volatile medium material that is configured to mediate the surface roughness of the organic crystalline phase during crystal nucleation and growth. The thin film may be formed using a suitably shaped mold, for example, and the non-volatile medium material may be disposed between a layer of the organic precursor and the mold during processing.

A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a SiC solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the SiC solution or to the SiC solution.