A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

A surface-coated cutting tool has a hard coating layer and a tool body, which is coated with a lower layer including a TiCN layer having at least an NaCl type face-centered cubic crystal structure and an upper layer formed of a TiAlCN layer having a single phase crystal structure of NaCl type face-centered cubic crystals or a mixed phase crystal structure of NaCl type face-centered cubic crystals and hexagonal crystals. The tool body is further coated with an outermost surface layer including an Al.sub.2O.sub.3 layer, when the layer of a complex nitride or complex carbonitride of Ti and Al is expressed by the composition formula: (Ti.sub.1-xAl.sub.x)(C.sub.yN.sub.1-y), the average amount Xave of Al in Ti and Al and the average amount Yave of C in C and N (both Xave and Yave are atomic ratios) respectively satisfy 0.60≦Xave≦0.95 and 0≦Yave≦0.005.

A surface-coated cutting tool has a hard coating layer and a tool body, which is coated with a lower layer including a TiCN layer having at least an NaCl type face-centered cubic crystal structure and an upper layer formed of a TiAlCN layer having a single phase crystal structure of NaCl type face-centered cubic crystals or a mixed phase crystal structure of NaCl type face-centered cubic crystals and hexagonal crystals. The tool body is further coated with an outermost surface layer including an Al.sub.2O.sub.3 layer, when the layer of a complex nitride or complex carbonitride of Ti and Al is expressed by the composition formula: (Ti.sub.1-xAl.sub.x)(C.sub.yN.sub.1-y), the average amount Xave of Al in Ti and Al and the average amount Yave of C in C and N (both Xave and Yave are atomic ratios) respectively satisfy 0.60≦Xave≦0.95 and 0≦Yave≦0.005.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.