The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):
Si.sub.aM1.sub.bSc.sub.cAl.sub.d  (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1-xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1-xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Various single crystals are disclosed including sapphire as well as methods of forming the same. A method of forming a crystalline structure is disclosed as well. The method can include providing a melt in a crucible having a die. The die can include a ventilation opening. The method can further include growing the crystalline structure from the die using an enclosed seed. The single crystals can have desirable geometric properties, including a length greater than a diameter greater than a thickness.