A vacuum pumping arrangement comprises a first pump which has a first inlet and a first outlet. The first inlet is fluidly connected to a first common pumping line. The first common pumping line includes a plurality of first pumping line inlets each of which is fluidly connectable to a least one process chamber within a group of process chambers that form a semiconductor fabrication tool. The vacuum pumping arrangement also includes a reserve pump which has a reserve inlet and a reserve outlet. The reserve inlet is selectively fluidly connectable to each process chamber within the group of process chambers that form the semiconductor fabrication tool. The vacuum pumping arrangement additionally includes a controller which is configured to selectively fluidly isolate the pump from one or more given process chambers and selectively fluidly connect the reserve pump with the said one or more given process chambers.

A method for evacuating a chamber employs a pump arrangement composed of a booster pump and of a downstream forepump is connected to the chamber. The booster pump is accelerated, gas from the chamber is introduced into the booster pump, such that from the booster pump there is temporarily extracted an excess power which exceeds the power provided by the drive of the booster pump. The gas is discharged through a bypass valve while the outlet pressure of the booster pump lies above a predefined threshold value, and the gas is directed to the forepump when the outlet pressure of the booster pump has fallen below the threshold value. The gas supplied by the booster pump is compressed by means of the forepump.

A vacuum line and method for controlling a vacuum line in which an auxiliary pumping device and a diluent gas injection device are controlled according to a first operating mode in which the pressure prevailing in the discharge pipe is maintained at less than or equal to 20,000 Pa or according to a second operating mode in which the pressure prevailing in the discharge pipe is greater than 20,000 Pa, and the injection of a diluent gas into the stream of the pumped gases is controlled, downstream of an intake of the rough pumping device, such as into the discharge pipe and/or into the rough pumping device and/or into the auxiliary pumping device by the diluent gas injection device in the second operating mode.

A vacuum pumping apparatus may include: a common pumping line having a plurality of pumping line inlets and a pumping line outlet, each pumping line inlet being configured to couple with an outlet of an associated plurality of vacuum processing chambers; at least one primary vacuum pump in fluid communication with the pumping line outlet to pump gas from each vacuum processing chamber; and control logic operable to control operation of the primary vacuum pump in response to an indication of an operating state of the plurality of vacuum processing chambers. In this way, the performance of the primary vacuum pump can be adjusted to match the load provided by the processing chambers and when there is an excess capacity, the performance of the primary vacuum pumps can be reduced, which can lead to significant energy savings and reduce wear on the pump.

Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO.sub.2 powder.

A pumping unit is provided, including a primary vacuum pump of a multistage dry type, including at least four pumping stages fitted in series; and a two-stage Roots vacuum pump, including a first pumping stage and a second pumping stage fitted in series, the second pumping stage being fitted in series with and upstream of a first pumping stage of the primary vacuum pump in a direction of flow of gases to be pumped, in which a ratio of a volume displacement of the first pumping stage of the two-stage Roots vacuum pump to a volume displacement of the second pumping stage of the two-stage Roots vacuum pump is less than six, and in which a ratio of a volume displacement of the second pumping stage of the two-stage Roots vacuum pump to a volume displacement of the first pumping stage of the primary vacuum pump is less than six.

Disclosed is a pump system for a semiconductor chamber includes a housing having a front chamber and a rear chamber, a roots-type rotor provided to the front chamber of the housing, a screw-type rotor provided to the rear chamber, a shaft member coupled through the roots-type rotor and the screw-type rotor, and a driving motor provided to the outside of the housing in such a way as to be axially connected to the shaft member to provide power for driving the rotors. A fluid pipe is provided to the outside of the housing to connect the front chamber and the rear chamber. The fluid pipe is provided with a heater and/or a cooler to heat or cool the fluid flowing through the fluid pipe.

A pumping unit is provided, including a primary vacuum pump of a multistage dry type, including at least four pumping stages fitted in series; and a two-stage Roots vacuum pump, including a first pumping stage and a second pumping stage fitted in series, the second pumping stage being fitted in series with and upstream of a first pumping stage of the primary vacuum pump in a direction of flow of gases to be pumped, in which a ratio of a volume displacement of the first pumping stage of the two-stage Roots vacuum pump to a volume displacement of the second pumping stage of the two-stage Roots vacuum pump is less than six, and in which a ratio of a volume displacement of the second pumping stage of the two-stage Roots vacuum pump to a volume displacement of the first pumping stage of the primary vacuum pump is less than six.

An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including: a determination unit configured to determine a normal variation range or a normal time variation behavior of a target state quantity which is a state quantity varying depending on a load of gas flowing into the vacuum pump, based on at least one of past target state quantities of the target vacuum pump or another vacuum pump; and a comparison unit configured to compare a current target state quantity of the target vacuum pump with the normal variation range or the normal time variation behavior and output the comparison result.

A vacuum pumping arrangement comprises a first pump which has a first inlet and a first outlet. The first inlet is fluidly connected to a first common pumping line. The first common pumping line includes a plurality of first pumping line inlets each of which is fluidly connectable to a least one process chamber within a group of process chambers that form a semiconductor fabrication tool. The vacuum pumping arrangement also includes a reserve pump which has a reserve inlet and a reserve outlet. The reserve inlet is selectively fluidly connectable to each process chamber within the group of process chambers that form the semiconductor fabrication tool. The vacuum pumping arrangement additionally includes a controller which is configured to selectively fluidly isolate the pump from one or more given process chambers and selectively fluidly connect the reserve pump with the said one or more given process chambers.