A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

An interferometer includes a holding element having an actuation recess, a first mirror element arranged on the holding element opposite the actuation recess, and a second mirror element arranged opposite the first mirror element at a mirror distance, to form an optical slit. The first mirror element is arranged between the second mirror element and the holding element and the optical slit is spatially separated from the actuation recess by the first mirror element. The interferometer further includes an electrode pair including a first actuation electrode in one of the mirror elements and a second actuation electrode on a side of the actuation recess opposite the first actuation electrode. The mirror distance can be varied by applying an electrical voltage to the electrode pair.

Bolometers and methods of forming the same are provided. A bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber comprising reduced graphene oxide, and a thermistor comprising partially reduced graphene oxide are described. Also described are methods for forming bolometers and the parts contained therein.

A device may include a filter array disposed on a substrate. The filter array may include a first mirror disposed on the substrate. The filter array may include a plurality of spacers disposed on the first mirror. A first spacer, of the plurality of spacers, may be associated with a first thickness. A second spacer, of the plurality of spacers, may be associated with a second thickness that is different from the first thickness. A first channel corresponding to the first spacer and a second channel corresponding to the second spacer may be associated with a separation width of less than approximately 10 micrometers (μm). The filter array may include a second mirror disposed on the plurality of spacers.

A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

A device may include a filter array disposed on a substrate. The filter array may include a first mirror disposed on the substrate. The filter array may include a plurality of spacers disposed on the first mirror. A first spacer, of the plurality of spacers, may be associated with a first thickness. A second spacer, of the plurality of spacers, may be associated with a second thickness that is different from the first thickness. A first channel corresponding to the first spacer and a second channel corresponding to the second spacer may be associated with a separation width of less than approximately 10 micrometers (μm). The filter array may include a second mirror disposed on the plurality of spacers.

A Fabry-Perot interference filter includes: a substrate having a first surface and a second surface facing each other; a first layer structure disposed on the first surface; and a second layer structure disposed on the second surface, wherein the first layer structure is provided with a first mirror portion and a second mirror portion facing each other with an air gap therebetween, and a distance between the first mirror portion and the second mirror portion is varied, and the second layer structure is formed with a separation region separating at least a part of the second layer structure into one side and another side in a direction along the second surface.

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).