Embodiments of the present disclosure generally relate to apparatus for and methods of detecting light utilizing the spin Seebeck effect (SSE). In an embodiment, a method for detecting broadband light is provided. The method includes generating a SSE in a device by illuminating the device with light, the device comprising a bilayer structure disposed over a substrate, the bilayer structure comprising a non-magnetic metal layer and a magnetic insulator layer. The method further includes measuring the SSE based on a field modulation method, determining, based on the measuring, an optically-created thermal gradient of the device, and detecting a wavelength range of the light. Apparatus for detecting broadband light are also described.

Embodiments of the present disclosure generally relate to apparatus for and methods of detecting light utilizing the spin Seebeck effect (SSE). In an embodiment, a method for detecting broadband light is provided. The method includes generating a SSE in a device by illuminating the device with light, the device comprising a bilayer structure disposed over a substrate, the bilayer structure comprising a non-magnetic metal layer and a magnetic insulator layer. The method further includes measuring the SSE based on a field modulation method, determining, based on the measuring, an optically-created thermal gradient of the device, and detecting a wavelength range of the light. Apparatus for detecting broadband light are also described.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

Systems and techniques are provided for sensor device. A sensor device may include a housing, a lens inserted into a first opening of the housing, a metal mask covering a portion of the interior of the lens, a passive infrared (PIR) sensor underneath the lens and the metal mask, and a light pipe around the PIR sensor, the lens, and the metal mask. Part of the light pipe may be positioned above an activation mechanism for a button. An airflow gasket may be around the PIR sensor. A filter circuit board may be under the PIR sensor and connected to leads of the PIR sensor. A control circuit board may include the activation mechanism for the button. A backplate may include a slot for attachment to a snap of a magazine in the housing of the sensor device.

Systems and techniques are provided for sensor device. A sensor device may include a housing, a lens inserted into a first opening of the housing, a metal mask covering a portion of the interior of the lens, a passive infrared (PIR) sensor underneath the lens and the metal mask, and a light pipe around the PIR sensor, the lens, and the metal mask. Part of the light pipe may be positioned above an activation mechanism for a button. An airflow gasket may be around the PIR sensor. A filter circuit board may be under the PIR sensor and connected to leads of the PIR sensor. A control circuit board may include the activation mechanism for the button. A backplate may include a slot for attachment to a snap of a magazine in the housing of the sensor device.

The invention is directed to a method for the production of an optoelectronic module including a support (5) and an additional layer, said support being formed by an assembly (25) which has no optoelectronic properties and which comprises, successively, a metal substrate (27), a dielectric coating (29) disposed on the metal substrate, and an electrically conductive layer (31) disposed on the dielectric coating. The production method comprises: a step of providing the support and performing a method in which the support is checked, or providing the support after it has already been checked; and a step of depositing at least one additional layer on the electrically conductive layer. The method in which support is checked comprises the following steps: electrical excitation of the support by bringing the metal substrate and the electrically conductive layer into electrical contact with a voltage source (33); and photothermal examination of the excited support so as to detect any possible fault (49, 51) located at least partially in the dielectric coating (29) and to provide a photothermal examination result.

The invention is directed to a method for the production of an optoelectronic module including a support (5) and an additional layer, said support being formed by an assembly (25) which has no optoelectronic properties and which comprises, successively, a metal substrate (27), a dielectric coating (29) disposed on the metal substrate, and an electrically conductive layer (31) disposed on the dielectric coating. The production method comprises: a step of providing the support and performing a method in which the support is checked, or providing the support after it has already been checked; and a step of depositing at least one additional layer on the electrically conductive layer. The method in which support is checked comprises the following steps: electrical excitation of the support by bringing the metal substrate and the electrically conductive layer into electrical contact with a voltage source (33); and photothermal examination of the excited support so as to detect any possible fault (49, 51) located at least partially in the dielectric coating (29) and to provide a photothermal examination result.

In an image processing apparatus, a first correction unit corrects imaging data acquired from an infrared imaging device, based on a first correction table, and outputs first corrected data. A second correction unit generates a second correction table for the imaging data in a state in which a shutter is closed, and outputs second corrected data based on the second correction table. A saturated region detection unit detects a saturated region in the imaging data. A shutter control unit performs closing control for the shutter, based on a result of detection of the saturated region. An abnormal pixel detection unit detects whether or not the imaging data acquired in the state in which the shutter is closed includes an abnormal pixel. A selection unit selects and outputs either the first corrected data or the second corrected data in accordance with a result of detection by the abnormal pixel detection unit.

In an image processing apparatus, a first correction unit corrects imaging data acquired from an infrared imaging device, based on a first correction table, and outputs first corrected data. A second correction unit generates a second correction table for the imaging data in a state in which a shutter is closed, and outputs second corrected data based on the second correction table. A saturated region detection unit detects a saturated region in the imaging data. A shutter control unit performs closing control for the shutter, based on a result of detection of the saturated region. An abnormal pixel detection unit detects whether or not the imaging data acquired in the state in which the shutter is closed includes an abnormal pixel. A selection unit selects and outputs either the first corrected data or the second corrected data in accordance with a result of detection by the abnormal pixel detection unit.