In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.

According to one embodiment, a sensor includes a sensor part and a first circuit. The sensor part includes a base body, a fixed electrode fixed to the base body, a supporter fixed to the base body, and a movable part supported by the supporter. The movable part includes a movable region including a movable electrode facing the fixed electrode, and a first support region provided between the movable region and the supporter. The first support region includes a first electrode, and a second electrode insulated from the first electrode. The first circuit is configured to perform a first operation of applying a voltage between the first electrode and the second electrode.

A gas sensor has a sensing structure that is used for generating, for a variety of gases, multiple corresponding electric signals. It has a plurality of measuring electrodes and a gas-sensitive film coating the measuring electrodes; and a micro-heating structure that is used for providing different heating temperatures for the sensing structure, and a silicon-based substrate and a heating layer disposed on the silicon-based substrate. The heating layer integrates heating electrodes of different sizes or different layouts to form a plurality of heating regions of different temperatures, and the plurality of measuring electrodes are respectively disposed in the corresponding heating regions. By integrating heating electrodes of different sizes or different layouts on a single micro-heating structure to form heating regions of different temperatures, a complex atmosphere detection function of a variety of sensing materials at different temperatures is achieved.

An apparatus and a method for measuring pressure, gas and/or humidity, the apparatus having at least one sensor with at least one capacitor comprising at least two electrodes that are arranged in a horizontal direction relative to one another along and on a flexible support material. At least one dielectric layer is arranged between the electrodes and at least one at least partially moisture-permeable and/or moisture-absorbing and/or gas-permeable and/or gas-absorbing moisture layer is arranged at least in some places on a side, facing away from a support material, of at least one electrode and/or the dielectric layer. At least one electrode and/or the dielectric layer are thus arranged transversely between the support material and the moisture layer. A capacitance is at least partially changed by moisture hitting the dielectric layer, and a processing unit measures and/or stores this change, so as to create a capacitive moisture sensor.

The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

An assembly comprising an upstream pipe, a downstream pipe, and a system (1) for measuring variation in the gas content of a two-phase flow, the assembly comprising:

an insulating sheath (6), an upstream ground (2), a measurement electrode (3), a guard electrode (7), and a downstream ground (4) arranged in succession in said insulating sheath (6) and each presenting an identical internal section defining an internal flow duct for a two-phase flow from the upstream ground (2) towards the downstream ground (4) in line with the upstream pipe and the downstream pipe, the guard electrode (7) being subjected to the same potential as the measurement electrode (3), the measurement electrode (3) measuring the capacitance of the two-phase flow relative to the upstream ground (2) and variation in that capacitance, the upstream ground (2) and the downstream ground (4) being electrically connected to the upstream pipe and to the downstream pipe, respectively.

Disclosed is a system and method for monitoring a characteristic of an environment of an electronic device. The electronic device may include a printed circuit board and a component. A sensor is placed on the printed circuit board, and may be between the component and the board, and connects to a monitor, or detector. An end user device may be used to store, assess, display and understand the data received from the sensor through the monitor.

A sensor is configured to measure the carbon dioxide concentration in a gas mixture. The sensor has a dielectric layer arranged between a layer-like first electrode and a layer-like second electrode. The second electrode is a composite electrode that has at least one carbonate and/or one phosphate as first material and at least one metal as second material. This sensor can be manufactured by a method comprising applying a layer-like first electrode to a substrate, applying a dielectric layer to the first electrode, and applying a layer-like second electrode to the dielectric layer. The second electrode is applied as a composite electrode that has at least one carbonate and/or one phosphate as first material and has at least one second material that has an electrical conductivity of more than 10-2 S/m.

According to one embodiment, a sensor includes a first sensor part. The first sensor part includes a first counter electrode, a first movable electrode, a first layer, and a first intermediate layer. The first movable electrode is between the first counter electrode and the first layer. The first intermediate layer is between the first movable electrode and a portion of the first layer. A first gap is located between the first counter electrode and the first movable electrode. A distance between the first counter electrode and the first movable electrode changes according to a concentration of a gas around the first sensor part. The first layer includes a crystal. The first intermediate layer is amorphous, or a crystallinity of the first intermediate layer is less than a crystallinity of the first layer. A width of the first layer is greater than a width of the first intermediate layer.

Capacitive measurements for monitoring vapor or deposits from a vapor in a radiation source for a lithography apparatus. The measurements may be used to control operation of the radiation source. In one particular arrangement measurements from a plurality of capacitors are used to distinguish between changes in capacitance caused by the vapor and changes in capacitance caused by deposits from the vapor.