Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.

An apparatus for detecting a crack of a semiconductor chip may include a crack sensor including a charging pattern disposed on a first surface of a target layer in which cracks are to be detected, a charge sinking pattern disposed on a second surface of the target layer, and a connecting pattern that electrically connects the charging pattern to the charge sinking pattern. The apparatus for detecting a crack may further include a charger for charging electric charges to the charging pattern, an image detector for obtaining an image of the charging pattern, and a determination unit that detects a discolored charging pattern from the image of the charging pattern and determines that a crack has occurred in a portion of the target layer in which the discolored charging pattern is located.

Methods and systems for determining one or more characteristics of light in an optical system are provided. One system includes first detector(s) configured to detect light having one or more wavelengths shorter than 190 nm emitted from a light source at one or more first angles mutually exclusive of one or more second angles at which the light is collected from the light source by an optical system for illumination of a specimen and to generate first output responsive to the light detected by the first detector(s). In addition, the system includes a control subsystem configured for determining one or more characteristics of the light at one or more planes in the optical system based on the first output.

Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.

The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

A projection is determined in a semiconductor image, which can be an X projection and/or a Y projection. At least one threshold is applied to the projection thereby forming at least one segment within the region. A fine segment can be determined in the region using a distance value from the projection. Defect detection can be performed in one of the fine segments.

A method for measuring a DIC defect shape on a silicon wafer, the method including steps of: detecting a DIC defect on a main surface of the silicon wafer with a particle counter; specifying position coordinates of the detected DIC defect; and measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interferometry. The method for measuring a DIC defect shape by which the shape including size of DIC defect generated on a main surface of a silicon wafer is easily and precisely measured.

The present application relates to the field of semiconductors, and provides a wafer measuring method, a wafer measuring device, and a computer-readable storage medium. The method includes: acquiring an image to be measured of a wafer to be measured and a preset measurement point, and acquiring an abnormal region in the image to be measured; acquiring a target measurement point outside the abnormal region based on the abnormal region if the preset measurement point is in the abnormal region; and measuring the wafer to be measured via the target measurement point. Compared with the prior art, the wafer measuring method and device, and the computer-readable storage medium according to some embodiments of the present application have an advantage in improving accuracy of a wafer measurement result.

Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The method includes receiving, at the electronic device, a computer-aided design (CAD) image for a lithography process of the semiconductor device, and generating, at the electronic device, a first scanning electron microscope (SEM) image and a first segment (SEG) image from the CAD image by using a machine learning-based module, and the first SEG image includes information about a location of a defect.

In an embodiment, a system includes: an orientation sensor configured to detect an orientation fiducial on a bevel of a wafer; a pedestal configured to rotate the wafer to allow the orientation sensor to detect the orientation fiducial and place the orientation fiducial at a predetermined orientation position; and a defect sensor configured to detect a wafer defect along a surface of the wafer while rotated by the pedestal.