A method and apparatus for operating a gas sensor are disclosed. In an embodiment a method for operating a gas sensor includes providing, by at least one gas sensor element, a sensing signal and correcting, by a neural network, the sensing signal, wherein the neural network comprises an input layer, an output layer and at least one hidden layer, wherein the input layer comprises a given number k>1 of input neurons for each gas sensor element, and wherein a respective gas sensor element provides its sensing signal to one of the corresponding input neurons dependent on a measurement parameter applied to the at least one gas sensor element.

A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.

A sensing chip with fluidic device includes a substrate with a first area and a second area, a field effect transistor is arranged in the second area of the substrate and is electrically connected with the field effect transistor. The fluidic device includes an insulation layer with a window to expose the surface of substrate in the second area. A second gate electrode is arranged in the window of the isolation layer on the second area of the substrate. The sample is placed in the fluidic device to contact with the second gate electrode, and the receptor(s) on the metal layer will capture the target object in the sample, so the voltage of the metal layer will change with amount of the target object captured by the receptor(s). Thus, the concentration of the target object(s) in the sample may obtain by the changes of the voltage of the metal layer.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates.

Aspects of the present disclosure provide measurement devices and methods for detecting electrical characteristics of devices under test (DUTs), such as semiconductor nanowires. Techniques described herein provide programmable measurement devices that may be implemented in a compact form factor while being able to perform reliable measurements. In some embodiments, measurement devices described herein may be programmed to modulate signals for transmitting to a DUT, and may demodulate signals from the DUTs adaptively using self-programming techniques described herein. Such self-programming may include applying a programmable phase delay to oscillator signals used during demodulation. In some embodiments, such measurement devices may be implemented on a single circuit board, in a single integrated circuit package, or even on a single solid-state semiconductor die. Techniques described herein may enable reliable, inexpensive, and small-scale fluid sample measurement devices.

A semiconductor device according to the present invention includes a substrate, a plurality of electrodes on the substrate, an insulator provided with one or a plurality of openings exposing at least one electrode among the plurality of electrodes on the substrate, the insulator covering at least a portion of the plurality of electrodes, and a semiconductor sheet on the insulator and one or a plurality of exposed portions exposed from the one or the plurality of openings on the substrate.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

A system and apparatus for direct or indirect target substance signal measurement include an integrated circuit with an array of 2D FETs with corresponding 2D transistor channels and a gate area for receiving a volume of liquid with one or more chemical or biological target substances, a conductive source electrically coupled to a first end of the 2D transistor channel, a conductive drain electrically coupled to a second end of the 2D transistor channel, a ceramic coating over the conductive source and the conductive drain and a thin film layer of synthetic biopolymer specific binding agents is adsorbed to the top surface of the 2D transistor channel. Methods for the system and apparatus and for selecting the synthetic biopolymer specific binding agents based on absorptivity are disclosed.

In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.

A precision graphene nanoribbon (GNR) bridge molecule can include: a central GNR having a precision structure selected the following structural types: armchair, zigzag, cove, chevron, and fjord; a functional anchoring group at either end of the GNR selected from the following: amine, thiol, thioether, stannane, halide, boronic acid, boronic ester, azide, and carbene; a central functional conjugation group at a precisely specified location; and edge group functionalization with solubilizing groups selected from the following: linear and branched alkyl chains, substituted aromatic rings, oligoethylene glycol, carboxylic acids, and sulfonic acids.